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TriQuint is proud to announce the latest additions to our innovative RF portfolio. View our New Products page to discover ways to simplify your RF designs across mobile, network infrastructure and defense applications.
TriQuint's QUANTUM Tx™ family of highly integrated transmit modules reduce board space and enable a much smaller footprint for 2G / 3G / 4G mobile devices. Find out how these building blocks can make RF design easier and faster for 2G and entry-level 3G devices.
TriQuint's innovative TriAccess™ portfolio enables more efficient broadband video, voice and data services. TriQuint amplifiers and filters lower power consumption with improved performance. TriQuint enables all major 75 ohm RF systems in headend, infrastructure, MDU and CPE applications.
Consumers have come to expect Wi-Fi connectivity in their smartphones, tablets and other mobile devices. You'll find TriQuint's TriConnect® Wi-Fi RF modules in many of the world's most sought-after products.
TRITIUM™ is a family of highly integrated modules designed for use in 3G mobile phones, data cards and USB modems. Optimize your 3G CDMA / WCDMA / HSUPA applications and gain maximum design flexibility.
TriQuint's highly integrated TRIUMF™ MMPAs are one more proven way that TriQuint engineers are delivering innovative solutions for the most complex mobile design challenges for cutting-edge smartphones. Let us help you simplify your 2G / 3G / 4G design and enhance system performance while speeding time to market.
Part # TQP7M9101
The TriQuint TQP7M9101 is a high-linearity driver amplifier in a standard SOT-89 surface mount package. This InGaP / GaAs HBT delivers high performance across a broad range of frequencies with +40 dBm OIP3 and +25 dBm P1dB while only consuming 87 mA quiescent current. All devices are 100% RF and DC tested.
The part incorporates on-chip features that differentiate it from other products in the market. The RF output is internally matched to 50 ohms. Only input matching is required for optimal performance in specific frequency bands making the component easy for design engineers to implement in their systems. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating.
The part is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power and high efficiency are required. The device is an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations.