Explore TriQuint's Latest Innovations

TriQuint is proud to announce the latest additions to our innovative RF product portfolio. These high-performance solutions simplify RF for designers worldwide and are available for sample or purchase through TriQuint's authorized distributors.

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Product
Description Key Features Learn More
TGA2597 2-6GHz GaN Driver Amplifier
  • Small signal gain: > 24 dB
  • Power: > 31.5 dBm
  • PAE: > 31 %
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    TGA2618-SM 16-18GHz GaAs LNA
  • NF: 2.3 dB
  • Small signal gain: 28 dB
  • Return loss: >10 dB
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    TGA2621 16-18GHz 1W GaAs PA
  • PAE: 28 % at Pin = 10 dBm
  • Small signal gain: 26.5 dB
  • Input return loss: > 13 dB
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    TGA2621-SM 16-18.5GHz 1W GaAs PA
  • Psat: > 30 dBm at Pin = 10 dBm
  • PAE: > 23 % at Pin = 10 dBm
  • Small signal gain: > 24.5 dB
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    TGA2622-CP 9-10GHz 35W GaN PA
  • Pout: 45.5 dBm (PIN = 18 dBm)
  • PAE: > 43 % (PIN = 18 dBm)
  • Power gain: 27.5 dB (PIN = 18 dBm)
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    TGA2623-CP 10-11GHz 32W GaN PA
  • Pout: 45 dBm (PIN = 18 dBm)
  • PAE: > 41 % (PIN = 18 dBm)
  • Power gain: 27 dB (PIN = 18 dBm)
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    TGA2624-CP 9-10GHz 16W GaN PA
  • Pout: 42 dBm (PIN = 15 dBm)
  • PAE: > 37 % (PIN = 15 dBm)
  • Power gain: 27 dB (PIN = 15 dBm)
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    TGA2625-CP 10-11GHz 17W GaN PA
  • Pout: 42.5 dBm (at PIN = 15 dBm)
  • PAE: > 40%
  • Power gain: 28 dB (at PIN = 15 dBm)
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    TGA2731-SM 2.7-4GHz Driver Amplifier (GaAs)
  • Small signal gain: > 24 dB
  • Power: > 30.7 dBm
  • PAE: > 22 %
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    TGA2813-CP 3.1-3.6GHz 100W GaN PA
  • Pout: 50 dBm (at PIN = 27 dBm)
  • Power gain: 23 dB (at PIN = 27 dBm)
  • PAE: 51% CW
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    TGA2814-CP 3.1-3.6GHz 80W GaN PA
  • Pout: 49 dBm (at PIN = 27 dBm)
  • Power gain: 23 dB (at PIN = 27 dBm)
  • PAE: 50% Pulsed
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    TGA3503-SM 2-30GHz GaAs Wideband Gain Block
  • Small signal gain: 10 dB typical
  • Return loss: 12 dB typical
  • NF: 4.0 dB mid-band
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    TGA3504-SM 2-30GHz GaAs Wideband Gain Block
  • Small signal gain: 11.5 dB mid-band
  • Return loss: >9 dB
  • NF: 3.4 dB typical
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    TGF2952 GaN Transistor - 7W, DC-14GHz
  • 38.4dBm nominal Psat at 3 GHz
  • 75.7% maximum PAE at 3 GHz
  • 20.4dB nominal power gain at 3GHz
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    TGF2953 GaN Transistor - 12W, DC-12GHz
  • 41.2dBm nominal Psat at 3.5 GHz
  • 73.7% maximum PAE at 3.5 GHz
  • 18.2dB nominal power gain at 3.5 GHz
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    TGF2954 GaN Transistor - 27W, DC-12GHz
  • 44.5dBm nominal Psat at 3GHz
  • 71.6% maximum PAE at 3 GHz
  • 19.6dB nominal power gain at 3 GHz
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    TGF2955 GaN Transistor - 40W, DC-12GHz
  • 46.4dBm nominal Psat at 3 GHz
  • 69% maximum PAE at 3 GHz
  • 19.2dB nominal power gain at 3 GHz
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    TGF2956 GaN Transistor - 55W, DC-12GHz
  • 47.6dBm nominal Psat at 3 GHz
  • 69.7% maximum PAE at 3 GHz
  • 19.3dB nominal power gain at 3 GHz
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    TGF2957 GaN Transistor - 70W, DC-12GHz
  • 48.6dBm nominal Psat at 3 GHz
  • 69.6% maximum PAE at 3 GHz
  • 19.2dB nominal power gain at 3 GHz
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    TGF3020-SM 5W, 32V, 4-6GHz, GaN RF 50-Ohm Input-Matched Transistor
  • Output power (P3dB): 6.8W at 5GHz
  • Typical PAE3dB: 59.6% at 5 GHz
  • Operating voltage: 32V
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    TGL2223-SM 1-31GHz 5-Bit Attenuator
  • Attenuation range: 15.5 dB
  • RMS step error: < 0.5 dB
  • Control voltage: -3.3 to -5.0 V
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    TGL2616 10-20GHz 5-Bit Attenuator
  • Attenuation range: 23.25 dB
  • RMS step error: < 0.2 dB
  • Positive logic
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    TGL2616-SM 10-20GHz 5-Bit Attenuator
  • Attenuation range: 23.25 dB
  • RMS step error: < 0.3 dB
  • Positive logic
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    TGS4310-SM 13-19GHz 2W SPDT Switch (GaAs)
  • Insertion loss: < 1.7 dB
  • Isolation: > 20 dB
  • Switching speed: 20 ns
  • Learn More

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