DOC-B-00000237

High IP3 Dual E-PHEMT Low Noise Amplifier

Part # TQP3M9039

Production   

Key Features

  • 0.05 - 1.5 GHz Operational Bandwidth
  • Ultra low noise figure, 0.5 dB NF (single channel)
  • High gain, 18 dB Gain
  • High linearity, +21 dBm Input IP3 (balanced config)
  • Integrated shut-down biasing feature
  • Positive supply only needed
  • Bias adjustable
  • Pin compatible with high-band TQP3M9040, TQP3M9041
  • 4x4mm 16-pin QFN package

Description

The TQP3M9039 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 830 MHz in a balanced configuration, the LNA provides 18 dB gain, 20.7 dBm IIP3 and 0.6 dB noise figure. The part does not require a negative supply for operation and is bias adjustable for both drain current and voltage. The device is housed in a green/RoHS-compliant industry standard QFN package.

The TQP3M9039 consists of a single monolithic GaAs E-pHEMT die and integrates bias circuitry as well as shut-down capability allowing the LNA to be useful for both FDD and TDD applications. The TQP3M9039 is optimized for the 50 - 1500 MHz band, but can be used outside of the band. TriQuint offers pin-compatible dual LNAs for the 1.5 - 2.3 GHz band (TQP3M9040) and 2.3 - 4.0 GHz (TQP3M9041). The balanced amplifier is optimized for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower mounted amplifiers.

Specifications

Frequency (GHz) 0.05 to 1.5
NF (dB) 0.6
Gain (dB) 18
Output IP3 (dBm) 38.8
P1dB (dBm) 21.5
Voltage (V) 4.35
Current (mA) 57
Package Style  4 x 4 mm
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production