TQM776003
WCDMA / HSUPA Power Amplifier Module with Coupler
Use TQM776011 for new designs
Key Features
- GaAs InGaP HBT power amplifier (PA) technology
- Typical quiescent current values:
- LPM: 6 mA (LPM able to operate up to +13 dBm)
- MPM: 20 mA
- HPM: 85 mA
- Excellent linearity in all modes
- Integrated high performance coupler
- Built-in voltage regulator functionality eliminating any external switch circuitry
- Optimized for 50 Ohm system
- Small 10-pin, 4 x 4 mm module
- Lead-free 260°C RoHS compliant
- Full ESD protection
- Halogen-free
Qorvo's TQM776003 is a fully matched power amplifier module designed for use in WCDMA handsets. Its compact 4 x 4 mm package (including coupler) makes it ideal for today's extremely small data enabled phones. Its RF performance meets the stringent linearity requirements of HSUPA operation.
The TQM776003 is designed on Qorvo's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The module includes built-in regulator functionality as well as a high performance coupler for maximum integration and space savings. The 3-gain state power amplifier die operates in LPM, MPM and HPM to maximize talk time over the entire range of operating conditions. To achieve the majority of the current savings and simplify the cost / time of calibration in production, the TQM776003 can be used in 1-bit operation LPM/HPM with only 6 mA of IcQ up to +13 dBm in LPM.
Product Categories
| Standards | WCDMA |
| Bands | 1 |
| Pout(dBm) | 28 |
| Gain(dB) | 27 |
| PAE(%) | 37 |
| Package(mm) | 4 x 4 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |