TGF4250-SCC
DC - 10.5 GHz, 4.8 mm HFET Die
Key Features
- Nominal Pout of 34 dBm at 8.5 GHz
- Nominal gain of 8.5 dB at 8.5 GHz
- Nominal PAE of 53% at 8.5 GHz
- Suitable for high reliability applications
- 4800 um x 0.5 um FET
- Bias at 8 V, 384 mA
- Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)
Qorvo's TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment.
Typical Applications
- Cellular Base Stations
- High Reliability Space
- Military
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 10,500 |
| Gain(dB) | 8.5 |
| Psat(dBm) | 34 |
| PAE(%) | 53 |
| Vd(V) | 8 |
| Idq(mA) | 384 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |