TriQuint TGF4240-SCC

TGF4240-SCC DatasheetDocuments & Files Below

2.4 mm HFET

The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain and 56% PAE.

Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4240-SCC is readily assembled using automatic equipment.

Frequency (GHz) Gain (dB) Power (dBm) NF (dB) PAE (%) Vd (V) IQ (mA)
DC to 12 10 31.5 56 8 192
Product Features
  • Frequency range: DC to 12 GHz
  • 2400 um x 0.5 um HFET
  • Nominal Pout of 31.5 dBm at 8.5 GHz
  • Nominal gain of 10.0 dB at 8.5 GHz
  • Nominal PAE of 56 % at 8.5 GHz
  • Suitable for high reliability applications
  • Dimensions: 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Typical Applications
  • Cellular Base Stations
  • High Reliability Space
  • Military
Additional Information
RoHS: Yes
Lead Free: Yes
Halogen Free: Yes
Status: Production
Updated: 04/18/2013