TGF2960-SD
DC - 5 GHz, 0.5 Watt GaAs HFET
Discontinued >
Please use TQP3M9028, TQP3M9007, or TQP7M9102 for new designs.
Key Features
- Frequency range: DC to 5 GHz
- Nominal 900 MHz application board performance:
- TOI: 40 dBm
- 28 dBm Psat, 27 dBm P1dB
- Gain: 19 dB
- Input return loss: -10 dB
- Output return loss: -5 dB
- Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (typical)
- Package dimensions: 4.5 x 4 x 1.5 mm
Qorvo's TGF2960-SD is a high performance 0.5 Watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT-89 surface mount package.
The device's ideal operating point is at a drain bias of 8 V and 100 mA. At this bias at 900 MHz when matched into 50 Ohms using external components, this device is capable of 19 dB of gain, 28 dBm of saturated output power and 40 dBm of output IP3.
The part is lead-free and RoHS compliant. Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz are available upon request.
Typical Applications
- Cellular Base Stations
- IF and LO Buffers
- RFID
- WiMAX
- Wireless Infrastructure
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 5,000 |
| Gain(dB) | 19 |
| OP1dB(dBm) | 27 |
| NF(dB) | 3.7 |
| Vd(V) | 8 |
| Idq(mA) | 100 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |