CFH800

    0.05 - 4 GHz Low Noise, High Linearity pHEMT FET

    Key Features

    • 0.5 dB Noise figure
    • 17 dB gain
    • 3V, 30 mA
    • 0.4 um gate length
    • 800 um gate width

    Qorvo's CFH800 is a low-cost, high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz for high performanc receivers. The device achieves a noise figure as low as 0.50 dB with 17 dB associated gain at 1.8 GHz. It is packaged in a low-cost miniature SC70 (SOT-143) package. The discrete FET configuration of the component allows for designers to fully optimize for the RF performance and biasing condition as needed.

    Typical Applications

      • Base Station Receivers
    Frequency Min(MHz) 50
    Frequency Max(MHz) 4,000
    Gain(dB) 17
    NF(dB) 0.5
    Vd(V) 3
    Idq(mA) 30
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT