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TriQuint is an industry leader in the development, advancement and production
of gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic and bulk
acoustic wave (SAW/BAW) technologies.
- GaAs can operate more efficiently at higher breakdown voltages in
frequencies in excess of 250 GHz while generating less noise compared
to other technologies.
- GaN offers even greater power handling capabilities, strong linearity and the ability to perform at a given power level using fewer or smaller devices. This generates less heat and can reduce overall system sizes and part counts.
- SAW offers excellent performance and economy through 2.5 GHz.
- BAW offers superior loss levels, stronger ESD performance and greater resistance to temperature effects for devices at frequencies from 2.5-6 GHz and beyond.
TriQuint's in-house technology portfolio is the industry's largest. It enables us to offer customers highly integrated modules including both active and passive RF components. Utilizing these in-house technologies, TriQuint's uniquely qualified engineering teams produce devices matched to transceiver and baseband components more efficiently than other approaches. This reduces system design time and speeds manufacturing while enhancing performance and overall reliability. Our experience also helps us to offer a large and diverse discrete device portfolio serving a wide range of RF applications. No other vendor has TriQuint's breadth of technology or ability to reduce the bill of materials, increase performance, and add value.
A wide-ranging technology portfolio enables us to make highly reliable, high-performance products. It also means foundry customers can take advantage of our research, development and high-volume capabilities. We offer numerous processes including MESFET, InGaP HBT, E/D pHEMT, and HFET available on 150mm and 100mm wafers.