GaN Products

TriQuint leads the market in developing gallium nitride (GaN) products and processes. Our GaN technology supports RF requirements up to 40 GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before.

TriQuint's narrowband amplifiers provide higher power with smaller form factors compared to previous generations. Our wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.

Key Benefits

  • High power density
  • Wideband performance
  • High power handling
  • Input power robustness

Related Resources
GaN Tech Hub

Visit TriQuint's new GaN resource sponsored by Richardson RFPD, featuring TriQuint's latest GaN solutions and a robust library of GaN technical resources.

Learn More
RF Simulation Models

Our GaN transistor models provide nonlinear simulation accuracy from Modelithics.

Register Online

Power Amplifiers

Parametric Search

NF
PAE
IQ
    GHz  dBm  dB  dB  mA 
TGA2216 0.1 - 3.0 GHz 12W GaN Power Amplifier 0.1 to 3.0 41 22 > 40 48 360
TGA2237 0.03 - 2.5GHz 10W GaN Power Amplifier 0.03 to 2.5 40 19 > 52 30 360
TGA2312-FL X-band 60 W GaN Power Amplifier 9 to 10 48 13 38 24 2,400
TGA2540-FL 30 - 3000 MHz GaN Power Amplifier 0.03 to 3 39.5 19.5 > 40 28 360
TGA2572 GaN 20W Ku Band Power Amplifier 14 to 16 43 23 30 35 2,000
TGA2572-2-FL 16 Watt Ku-Band GaN Power Amplifier 14 to 16 42 25 20 30 2,000
TGA2573-2-TS 2 - 18 GHz, 10 Watt GaN Amplifier on Carrier 2 to 18 40 10 20 30 500
TGA2576-2-FL 2.5 - 6 GHz 40W GaN Power Amplifier 2.5 to 6 46.5 29 36 30 1,550
TGA2576-FL 2.5 - 6 GHz GaN HEMT Power Amplifier 2.5 to 6 45.5 26 35 30 1,550
TGA2578 2-6 GHz 30W Power Amplifier 2 to 6 45 27 40 28 400
TGA2579-2-FL 20 Watt Ku-Band GaN Power Amplifier 14 to 15.35 43 35 27 25 1,000
TGA2583 2.7 - 3.7GHz 10W GaN Power Amplifier 2.7 to 3.7 40 33 54 25 175
TGA2583-SM 2.7 - 3.7 GHz 10W GaN Power Amplifier 2.7 to 3.7 40.5 33 > 50 25 to 32 175
TGA2585 2.7 - 3.7 GHz 18W GaN Power Amplifier 2.7 to 3.7 42.8 33 54 28 225
TGA2585-SM 2.7 - 3.7 GHz 18W GaN Power Amplifier 2.7 to 3.7 42.5 32 28 225
TGA2586-FL 7.9 - 8.4 GHz 50W GaN Power Amplifier 7.9 to 8.4 47 14 36 24 2,240
TGA2594 27-31 GHz 5 W GaN Power Amplifier 27 to 31 37 23 28 20 140
TGA2595 27.5 - 31 GHz 9W Power Amplifier 27.5 to 31 39.5 23 24 20 280
TGA2622 9 - 10 GHz 40W GaN Power Amplifier 9 to 10 46 32 > 46 28 290
TGA2623 10 - 11 GHz 35W GaN Power Amplifier 10 to 11 45.5 35 > 47 28 290
TGA2813 3.1 - 3.6 GHz 100 W GaN Power Amplifier 3.1 to 3.6 50.7 22 55 30 150
TGA2814 3.1 - 3.6 GHz 80 W GaN Power Amplifier 3.1 to 3.6 49.5 22 56 30 125

Switches

Parametric Search

ISO
    GHz  dB  dB  dBm  mA   
TGS2352 DC - 12 GHz High Power GaN SPDT Switch DC to 12 < 1 -35 > 43 0, -40 < 1 Die
TGS2352-2-SM 0.5 to 12 GHz High Power SPDT Reflective Switch 0.5 to 12 < 1 -35 20 0 to -40 QFN
TGS2353 DC - 18 GHz High Power GaN SPDT Switch DC to 18 1.5 -30 > 40 0, -40 < 1 Die
TGS2353-2-SM 0.5 to 18 GHz High Power SPDT Reflective Switch 0.5 to 18 < 1.5 -30 10 0 to -40 QFN

Discrete Transistors

Parametric Search

NF
PAE
    GHz  dB  dBm  dBm  dB  mA   
T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor DC to 2 19 54.2 54 36 576
T1G2028536-FS 285W, 36V DC – 2 GHz, GaN RF Power Transistor DC to 2 19 54.2 54 36 576
T1G4003532-FL 35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 17 45.7 54 32 150 NI-360
T1G4003532-FS 35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 17 45.7 54 32 150 NI-360
T1G4004532-FL 45W Peak Power, 32V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 > 19 32 220 flanged
T1G4004532-FS 45W Peak Power, 32V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 > 19 32 220 flangeless
T1G4005528-FS 55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 15 47.2 > 50 28 200 NI-360
T1G4012036-FL 120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 16 50.8 52 36 360 NI-360
T1G4020036-FL 2x120W Peak Power, 2x24W Average Power, 36V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 16 36 520
T1G4020036-FS 2x120W Peak Power, 2x24W Average Power, 36V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 16 36 520
T1G6000528-Q3 7 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15.5 39.5 > 50 28 50 NI-200
T1G6001032-SM 10 W, 32 V, DC - 6 GHz GaN RF Power Transistor DC to 6 19 40 54 32 50 5 x 5 mm
T1G6001528-Q3 18 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15 42.5 > 50 28 50 NI-200
T1G6003028-FL 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
T1G6003028-FS 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
T2G4003532-FL 30W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 16.5 44.5 49 32 150 NI-360
T2G4003532-FS 30W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 16.5 44.5 49 32 150 NI-360
T2G4005528-FS 55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 15 47.2 > 50 28 200 NI-360
T2G6000528-Q3 7 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15.5 39.5 50 28 50 NI-200
T2G6001528-Q3 18 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15 42.5 > 50 28 50 NI-200
T2G6001528-SG 15W 28V DC-6 GHz GaN RF Power Transistor DC to 6 15.5 42.3 28 100
T2G6003028-FL 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
T2G6003028-FS 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 38 55 28 to 40 125 Die
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 41 55 28 to 40 250 Die
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 44 55 28 to 40 500 Die
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 47 55 28 to 40 1,000 Die
TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT DC to 18 18 38 71.6 12 to 32 25 to 125 Die
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT DC to 18 21 40.1 73.3 12 to 32 50 to 250 Die
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT DC to 18 18 43 78.3 12 to 32 100 to 500 Die
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT DC to 18 19.8 47.3 69.5 12 to 32 200 to 1,000 Die
TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT DC to 18 19.2 50.5 70.5 12 to 32 400 to 2,000 Die
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 50 55 28 to 40 2,000 Die

Low Noise Amplifiers

Parametric Search

NF
    GHz  dB  dB  dBm  dBm  mA   
TGA2612 6-12 GHz GaN LNA 6 to 12 1.8 22 29 20 10 100