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GaN FETs

Discrete Devices (14)


Part	Description	Frequency (GHz)	Gain (dB)	Power (dBm)	NF (dB)	PAE (%)	Vd (V)	IQ (mA)

T1G4005528-FS	55 W, 28 V, DC - 3.5 GHz, GaN RF Power Transistor	DC to 3.5	15	47.2		> 50	28	200
T1G6000528-Q3	7 W, 28 V, DC - 6 GHz, GaN RF Power Transistor	DC to 6	15.5	39.5		> 50	28	50
T1G6001528-Q3	18 W, 28 V, DC - 6 GHz, GaN RF Power Transistor	DC to 6	15	42.5		> 50	28	50
T2G6000528-Q3	7 W, 28 V, DC - 6 GHz, GaN RF Power Transistor	DC to 6	15.5	39.5		50	28	50
TGF2023-01	6 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 38		55	28 to 40	125
TGF2023-02	12 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 41		55	28 to 40	250
TGF2023-05	25 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 44		55	28 to 40	500
TGF2023-10	50 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 47		55	28 to 40	1,000
TGF2023-2-01	6 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 38		55	28 to 40	125
TGF2023-2-02	12 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 41		55	28 to 40	250
TGF2023-2-05	25 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 44		55	28 to 40	500
TGF2023-2-10	50 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 47		55	28 to 40	1,000
TGF2023-2-20	100 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 50		55	28 to 40	2,000
TGF2023-20	100 Watt Discrete Power GaN on SiC HEMT	DC to 18	15	> 50		55	28 to 40	2,000