 |
|
|
|
|
|
|
|
|
|
|
| Part |
Description |
Frequency (GHz) |
Linear Gain (dB) |
P1dB (dBm) |
Psat (dBm) |
NF (dB) |
PAE (%) |
Voltage (V) |
Current (mA) |
Package Style |
|
|
|
|
|
|
|
|
|
|
|
| CLY2 |
GaAs FET |
DC to 3 |
14.5 |
23.5 |
|
0.79 |
|
3 |
180 |
MW6 |
| CLY5 |
GaAs FET |
0.4 to 2.5 |
11 |
27 |
|
1.7 |
|
3 |
350 |
MW6 |
| T1G4003532-FL |
35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
17 |
|
45.7 |
|
54 |
32 |
150 |
NI-360 |
| T1G4003532-FS |
35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
17 |
|
45.7 |
|
54 |
32 |
150 |
NI-360 |
| T1G4005528-FS |
55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
15 |
|
47.2 |
|
> 50 |
28 |
200 |
NI-360 |
| T1G4012036-FL |
120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
16 |
|
50.8 |
|
52 |
36 |
360 |
NI-360 |
| T1G4012036-FS |
120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
16 |
|
50.8 |
|
52 |
36 |
360 |
NI-360 |
| T1G6000528-Q3 |
7 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
15.5 |
|
39.5 |
|
> 50 |
28 |
50 |
NI-200 |
| T1G6001032-SM |
10 W, 32 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
19 |
|
40 |
|
54 |
32 |
50 |
5 x 5 mm |
| T1G6001528-Q3 |
18 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
15 |
|
42.5 |
|
> 50 |
28 |
50 |
NI-200 |
| T1G6003028-FL |
30 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
14 |
|
45 |
|
50 |
28 |
200 |
NI-200 |
| T1G6003028-FS |
30 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
14 |
|
45 |
|
50 |
28 |
200 |
NI-200 |
| T1L2003028-SP |
30 W, 28 V, 500 MHz - 2 GHz LDMOS RF Power Transistor |
0.5 to 2 |
10 |
|
45 |
|
45 |
28 |
200 |
Custom |
| T1P2701012-SP |
10 W, 12 V, 500 MHz - 3 GHz pHEMT RF Power Transistor |
0.5 to 2.7 |
10 |
|
40 |
|
45 |
12 |
200 |
Custom |
| T2G4005528-FS |
55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor |
DC to 3.5 |
15 |
|
47.2 |
|
> 50 |
28 |
200 |
NI-360 |
| T2G6000528-Q3 |
7 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
15.5 |
|
39.5 |
|
50 |
28 |
50 |
NI-200 |
| T2G6003028-FL |
30 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
14 |
|
45 |
|
50 |
28 |
200 |
NI-200 |
| T2G6003028-FS |
30 W, 28 V, DC - 6 GHz GaN RF Power Transistor |
DC to 6 |
14 |
|
45 |
|
50 |
28 |
200 |
NI-200 |
| TGF2018 |
180 um Discrete GaAs pHEMT |
DC to 20 |
14 |
|
22 |
1 |
55 |
8 |
29 |
Die |
| TGF2021-01 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
|
> 30 |
|
59 |
8 to 12 |
75 to 125 |
Die |
| TGF2021-02 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
|
> 33 |
|
59 |
8 to 12 |
150 to 250 |
Die |
| TGF2021-04 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
|
> 36 |
|
59 |
8 to 12 |
300 to 500 |
Die |
| TGF2021-08 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
|
> 39 |
|
59 |
8 to 12 |
600 to 1,000 |
Die |
| TGF2021-12 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
|
> 42 |
|
58 |
8 to 12 |
900 to 1,500 |
Die |
| TGF2022-06 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
|
> 28 |
|
58 |
8 to 12 |
45 to 75 |
Die |
| TGF2022-12 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
|
> 31 |
|
58 |
8 to 12 |
90 to 150 |
Die |
| TGF2022-24 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
|
> 34 |
|
58 |
8 to 12 |
180 to 300 |
Die |
| TGF2022-48 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
|
> 37 |
|
58 |
8 to 12 |
360 to 600 |
Die |
| TGF2022-60 |
Ku Band Discrete Power pHEMT |
DC to 20 |
12 |
|
> 38 |
|
57 |
8 to 12 |
448 to 752 |
Die |
| TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 38 |
|
55 |
28 to 40 |
125 |
Die |
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 41 |
|
55 |
28 to 40 |
250 |
Die |
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 44 |
|
55 |
28 to 40 |
500 |
Die |
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 47 |
|
55 |
28 to 40 |
1,000 |
Die |
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 38 |
|
55 |
28 to 40 |
125 |
Die |
| TGF2023-2-02 |
12 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 41 |
|
55 |
28 to 40 |
250 |
Die |
| TGF2023-2-05 |
25 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 44 |
|
55 |
28 to 40 |
500 |
Die |
| TGF2023-2-10 |
50 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 47 |
|
55 |
28 to 40 |
1,000 |
Die |
| TGF2023-2-20 |
100 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 50 |
|
55 |
28 to 40 |
2,000 |
Die |
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
|
> 50 |
|
55 |
28 to 40 |
2,000 |
Die |
| TGF2025 |
250 um Discrete GaAs pHEMT |
DC to 20 |
14 |
|
25 |
0.9 |
58 |
8 |
41 |
Die |
| TGF2040 |
400 um Discrete GaAs pHEMT |
DC to 20 |
13 |
|
26 |
1.1 |
55 |
8 |
65 |
Die |
| TGF2060 |
600 um Discrete GaAs pHEMT |
DC to 20 |
12 |
|
28 |
1.4 |
55 |
8 |
97 |
Die |
| TGF2080 |
800 um Discrete GaAs pHEMT |
DC to 20 |
11.5 |
|
29.5 |
|
56 |
8 |
129 |
Die |
| TGF2120 |
1200 um Discrete GaAs pHEMT |
DC to 20 |
11 |
31 |
|
|
57 |
8 |
194 |
Die |
| TGF2960-SD |
0.5 Watt GaAs HFET |
DC to 5 |
19 |
27 |
|
3.7 |
|
8 |
100 |
SOT-89 |
| TGF2961-SD |
1 Watt GaAs HFET |
DC to 4 |
18 |
30 |
|
3.3 |
|
8 |
200 |
SOT-89 |
| TGF4112 |
12 mm HFET |
DC to 8 |
14 @ 2 GHz |
|
37 |
|
55 |
8 |
750 |
Die |
| TGF4118 |
18 mm HFET |
DC to 6 |
13.5 @ 2 GHz |
|
38.5 |
|
53 |
8 |
1,690 |
Die |
| TGF4124 |
24 mm HFET |
DC to 4 |
13 @ 2 GHz |
|
40 |
|
51 |
8 |
2,170 |
Die |
| TGF4230-SCC |
1.2 mm HFET |
DC to 12 |
10 |
|
28.5 |
|
55 |
8 |
96 |
Die |
| TGF4240-SCC |
2.4 mm HFET |
DC to 12 |
10 |
|
31.5 |
|
56 |
8 |
192 |
Die |
| TGF4250-SCC |
4.8 mm HFET |
DC to 10.5 |
8.5 |
|
34 |
|
53 |
8 |
384 |
Die |
| TGF4260-SCC |
9.6 mm HFET |
DC to 10.5 |
9.5 |
|
37 |
|
52 |
8.5 |
768 |
Die |