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| Part |
Description |
Frequency (GHz) |
Gain (dB) |
Power (dBm) |
NF (dB) |
PAE (%) |
Vd (V) |
IQ (mA) |
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| T1G4005528-FS |
55 W, 28 V, DC - 3.5 GHz, GaN RF Power Transistor |
DC to 3.5 |
15 |
47.2 |
|
> 50 |
28 |
200 |
| T1G6000528-Q3 |
7 W, 28 V, DC - 6 GHz, GaN RF Power Transistor |
DC to 6 |
15.5 |
39.5 |
|
> 50 |
28 |
50 |
| T1G6001528-Q3 |
18 W, 28 V, DC - 6 GHz, GaN RF Power Transistor |
DC to 6 |
15 |
42.5 |
|
> 50 |
28 |
50 |
| T1L2003028-SP |
30 W, 28 V, 500 MHz - 2 GHz LDMOS RF Power Transistor |
0.5 to 2 |
10 |
45 |
|
45 |
28 |
200 |
| T1P2701012-SP |
10 W, 12 V, 500 MHz - 3 GHz pHEMT RF Power Transistor |
0.5 to 2.7 |
10 |
40 |
|
45 |
12 |
200 |
| TGF2021-01 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
> 30 |
|
59 |
8 to 12 |
75 to 125 |
| TGF2021-02 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
> 33 |
|
59 |
8 to 12 |
150 to 250 |
| TGF2021-04 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
> 36 |
|
59 |
8 to 12 |
300 to 500 |
| TGF2021-08 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
> 39 |
|
59 |
8 to 12 |
600 to 1,000 |
| TGF2021-12 |
X Band Discrete Power pHEMT |
DC to 12 |
11 |
> 42 |
|
58 |
8 to 12 |
900 to 1,500 |
| TGF2022-06 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
> 28 |
|
58 |
8 to 12 |
45 to 75 |
| TGF2022-12 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
> 31 |
|
58 |
8 to 12 |
90 to 150 |
| TGF2022-24 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
> 34 |
|
58 |
8 to 12 |
180 to 300 |
| TGF2022-48 |
Ku Band Discrete Power pHEMT |
DC to 20 |
13 |
> 37 |
|
58 |
8 to 12 |
360 to 600 |
| TGF2022-60 |
Ku Band Discrete Power pHEMT |
DC to 20 |
12 |
> 38 |
|
57 |
8 to 12 |
448 to 752 |
| TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
> 38 |
|
55 |
28 to 40 |
125 |
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
> 41 |
|
55 |
28 to 40 |
250 |
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
> 44 |
|
55 |
28 to 40 |
500 |
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
> 47 |
|
55 |
28 to 40 |
1,000 |
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT |
DC to 18 |
15 |
> 50 |
|
55 |
28 to 40 |
2,000 |
| TGF4112 |
12 mm HFET |
DC to 8 |
14 @ 2 GHz |
37 |
|
55 |
8 |
750 |
| TGF4118 |
18 mm HFET |
DC to 6 |
13.5 @ 2 GHz |
38.5 |
|
53 |
8 |
1,690 |
| TGF4124 |
24 mm HFET |
DC to 4 |
13 @ 2 GHz |
40 |
|
51 |
8 |
2,170 |
| TGF4230-SCC |
1.2 mm HFET |
DC to 12 |
10 |
28.5 |
|
55 |
8 |
96 |
| TGF4240-SCC |
2.4 mm HFET |
DC to 12 |
10 |
31.5 |
|
56 |
8 |
192 |
| TGF4250-SCC |
4.8 mm HFET |
DC to 10.5 |
8.5 |
34 |
|
53 |
8 |
384 |
| TGF4260-SCC |
9.6 mm HFET |
DC to 10.5 |
9.5 |
37 |
|
52 |
8.5 |
768 |