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Ultra Low-noise Highly Linear Integrated 1.5 to 2.7 GHz LNA
IWS Conference 2013
Jingshi Yao, Xiaopeng Sun, Barry Lin
This paper presents a wideband fully integrated low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 micron GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2x2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.top
IWS Conference 2013
Jingshi Yao, Xiaopeng Sun, Barry Lin
This paper presents a wideband fully integrated low-noise amplifier with a noise figure of less than 0.5 dB. The device is fabricated in a 0.35 micron GaAs enhancement-mode pHEMT process because of its positive threshold voltage and superior noise performance. The amplifier is housed in a low-cost 2x2 mm2 8-pin QFN plastic package with internal gate biasing and input and output matching. To our knowledge, this work achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) of 15dB at a frequency range of 1.5-2.7GHz for sub-0.5 dB NF LNA, and integrated power-down function for system control.top
A High-Efficiency, Small-Size GaN Doherty Amplifier for LTE Micro-Cell and Active Antenna System Applications
EDICON
Peter Xia , Milos Jankovic
A high efficiency small size GaN Doherty amplifier for LTE microcell base station and active antenna systems base station application is implemented with a TriQuint wideband discrete GaN RF power transistor, the T1G6001528-Q3.top
EDICON
Peter Xia , Milos Jankovic
A high efficiency small size GaN Doherty amplifier for LTE microcell base station and active antenna systems base station application is implemented with a TriQuint wideband discrete GaN RF power transistor, the T1G6001528-Q3.top
Reconfigurable Multiband SAW Filters for LTE Applications
EDICON
Xiaoming Lu, Jeffery Galipeau, Koen Mouthaan, Emmanuelle Henry Briot, Benjamin Abbott
The need for multi-mode, multi-band RF filter solutions for advanced W-CDMA, LTE and similar platforms continues to grow. Acoustic filters, typical SAW and BAW, play a critical role in satisfying complex LTE system requirements. Mobile devices and corresponding network radio filters typically have fixed center frequencies; this fact limits service to specific bands and increases bills of materials (BOM) proportionally as the number of bands increases in each radio chipset. The authors propose a new solution for reconfiguring SAW filters that can be more cost-effective while delivering smaller-size devices than can also reduce BOMs for LTE and similar RF applications.top
EDICON
Xiaoming Lu, Jeffery Galipeau, Koen Mouthaan, Emmanuelle Henry Briot, Benjamin Abbott
The need for multi-mode, multi-band RF filter solutions for advanced W-CDMA, LTE and similar platforms continues to grow. Acoustic filters, typical SAW and BAW, play a critical role in satisfying complex LTE system requirements. Mobile devices and corresponding network radio filters typically have fixed center frequencies; this fact limits service to specific bands and increases bills of materials (BOM) proportionally as the number of bands increases in each radio chipset. The authors propose a new solution for reconfiguring SAW filters that can be more cost-effective while delivering smaller-size devices than can also reduce BOMs for LTE and similar RF applications.top
A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology
CSICS 2012
Charles F. Campbell, Kim Tran, Ming-Yih Kao and Sabyasachi Nayak
Overcoming performance challenges of next-generation commercial and defense communications designs has been demonstrated utilizing a dual field plate 0.15µm GaN on SiC HEMT process technology. Researchers achieved 5W of saturated output power and up to 48% power added efficiency (PAE).top
CSICS 2012
Charles F. Campbell, Kim Tran, Ming-Yih Kao and Sabyasachi Nayak
Overcoming performance challenges of next-generation commercial and defense communications designs has been demonstrated utilizing a dual field plate 0.15µm GaN on SiC HEMT process technology. Researchers achieved 5W of saturated output power and up to 48% power added efficiency (PAE).top
A Compact 70 Watt Power Amplifier MMIC Utilizing S-band GaN on SiC HEMT Process
CSICS 2012
Shuoqi Chen, Elias Reese and Tuong Nguyen
The authors demonstrate how they achieved high efficiency operation of a high power amplifier MMIC at S-band frequencies utilizing TriQuint 0.25µm GaN on SiC technology. They achieved greater than 70W output power at 40V operation. The GaN on SiC circuit minimized die area while delivering excellent output power density and nearly constant efficiency over a wide range of bias voltages.top
CSICS 2012
Shuoqi Chen, Elias Reese and Tuong Nguyen
The authors demonstrate how they achieved high efficiency operation of a high power amplifier MMIC at S-band frequencies utilizing TriQuint 0.25µm GaN on SiC technology. They achieved greater than 70W output power at 40V operation. The GaN on SiC circuit minimized die area while delivering excellent output power density and nearly constant efficiency over a wide range of bias voltages.top
High Performance Ka-Band VPIN Limiters
CSICS 2012
Raj Santhakumar and Don Allen
The authors demonstrate the successful design of passive high power multi-stage limiters operating from 33-36 GHz using a high-yielding GaAs Vertical PIN (VPIN) diode process. They achieved high performance including low insertion loss of 0.8dB and flat leakage power of 19dBm. They indicate that a key to achieving high performance was accurate large signal modeling of the PIN diodes.top
CSICS 2012
Raj Santhakumar and Don Allen
The authors demonstrate the successful design of passive high power multi-stage limiters operating from 33-36 GHz using a high-yielding GaAs Vertical PIN (VPIN) diode process. They achieved high performance including low insertion loss of 0.8dB and flat leakage power of 19dBm. They indicate that a key to achieving high performance was accurate large signal modeling of the PIN diodes.top
100 Gb/s Optical DP-QPSK using two Surface Mount Dual Channel Modulator Drivers
CSICS 2012
Craig Steinbeiser, Khiem Dinh, Anthony Chiu, Matt Coutant, Oleh Krutko, Mike Tessaro
Achieving excellent channel-to-channel isolation is a key performance point for dual channel SMT optical modulator drivers. This paper explores ways that TriQuint's surface mount solution reduces PCB area space and increases efficiency while delivering superior isolation for next-generation 100 Gb/s transponders.top
CSICS 2012
Craig Steinbeiser, Khiem Dinh, Anthony Chiu, Matt Coutant, Oleh Krutko, Mike Tessaro
Achieving excellent channel-to-channel isolation is a key performance point for dual channel SMT optical modulator drivers. This paper explores ways that TriQuint's surface mount solution reduces PCB area space and increases efficiency while delivering superior isolation for next-generation 100 Gb/s transponders.top
High-Efficiency Harmonically-Terminated Rectifier for Wireless Powering Applications
IEEE MTTS 2012
Michael Roberg, Erez Falkenstein and Zoya Popovic
This paper presents an approach to high-efficiency microwave rectifier design based on reduced conduction angle power amplifier theory. By demonstrating the concept on the example of a dual-linearity polarized patch rectenna, it is shown that the class-C rectifier can be applied to improving the efficiency of a wireless powering reception device.top
IEEE MTTS 2012
Michael Roberg, Erez Falkenstein and Zoya Popovic
This paper presents an approach to high-efficiency microwave rectifier design based on reduced conduction angle power amplifier theory. By demonstrating the concept on the example of a dual-linearity polarized patch rectenna, it is shown that the class-C rectifier can be applied to improving the efficiency of a wireless powering reception device.top
High Efficiency Ka-band Power Amplifier MMICs Fabricated with a 0.15um GaN on SiC HEMT Process
IEEE MTTS 2012
Charles F. Campbell, Ming-Yih Kao and Sabyasachi Nayak
Ka-band power amplifiers MMICs are critical components for many commercial and military electronic systems. This paper presents the design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15um GaN HEMT process technology.top
IEEE MTTS 2012
Charles F. Campbell, Ming-Yih Kao and Sabyasachi Nayak
Ka-band power amplifiers MMICs are critical components for many commercial and military electronic systems. This paper presents the design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15um GaN HEMT process technology.top
Digital Pre-distortion for Improving Efficiency, Linearity and Average Output Power of Microwave Point-to-Point Power Amplifiers used in Cellular Backhaul Communication Systems
IEEE MTTS 2012
Roger Branson, Craig Steinbeiser, Kim Tran, Brian Loran and David Wohlert
This paper explains the successful demonstration of digital pre-distortion on amplifiers operating at 13 GHz, 15 GHz, and 22 GHz. These digital pre-distortion techniques could be applied to microwave power amplifiers and systems, providing significant linearization improvement while increasing efficiency.top
IEEE MTTS 2012
Roger Branson, Craig Steinbeiser, Kim Tran, Brian Loran and David Wohlert
This paper explains the successful demonstration of digital pre-distortion on amplifiers operating at 13 GHz, 15 GHz, and 22 GHz. These digital pre-distortion techniques could be applied to microwave power amplifiers and systems, providing significant linearization improvement while increasing efficiency.top
Development of a Double Layer Spray/Spin Coat Process for Improving Coat Uniformity of an 80 Micron Coat Process
© 2012 CS ManTech Conference
Martin Ivie, Jan Campbell, Qizhi He, Howie Yang, Kara Palmer, Mike Sexton, and Chad Brubaker
This paper explores the improvement of uniformity control when using a double layer spray/spin coat for 80um photo definable epoxy applications, instead of a double layer spin/spin process.top
© 2012 CS ManTech Conference
Martin Ivie, Jan Campbell, Qizhi He, Howie Yang, Kara Palmer, Mike Sexton, and Chad Brubaker
This paper explores the improvement of uniformity control when using a double layer spray/spin coat for 80um photo definable epoxy applications, instead of a double layer spin/spin process.top
Adhesion Characterization of Photo-definable Epoxies on High Aspect Ratio Structures for High Performance Applications
© 2012 CS ManTech Conference
Martin Ivie, Jan Campbell, and Qizhi He
This paper provides insight into adhesion, a critical component in backside processing and the assembly of semiconductors. The study of the adhesion effects of two different photo-definable epoxies processed on different thin films resulted in one epoxy (KMPR) demonstrating significant improvements over a second epoxy (SU8) on silicon nitride.top
© 2012 CS ManTech Conference
Martin Ivie, Jan Campbell, and Qizhi He
This paper provides insight into adhesion, a critical component in backside processing and the assembly of semiconductors. The study of the adhesion effects of two different photo-definable epoxies processed on different thin films resulted in one epoxy (KMPR) demonstrating significant improvements over a second epoxy (SU8) on silicon nitride.top
Rework Reduction and Optimization of 150MM Wafer Mount Process
© 2012 CS ManTech Conference
Pavan Bhatia, Jan Campbell and Martin Ivie
This paper describes the process for discovering and implementing process improvements that reduced the rework rate at the wafer mount operation for 150mm acoustic wave wafers. The average remount rate at TriQuint was reduced from 17.5% in 2010 to 0.86% in 2011, saving manufacturing time as well as reducing costs. New ultra-flat carriers provided one of the most significant improvements.top
© 2012 CS ManTech Conference
Pavan Bhatia, Jan Campbell and Martin Ivie
This paper describes the process for discovering and implementing process improvements that reduced the rework rate at the wafer mount operation for 150mm acoustic wave wafers. The average remount rate at TriQuint was reduced from 17.5% in 2010 to 0.86% in 2011, saving manufacturing time as well as reducing costs. New ultra-flat carriers provided one of the most significant improvements.top
Backside Via Process of GaN Device Fabrication
© 2012 CS ManTech Conference
Ju-Ai Ruan, Craig Hall, Celicia Della-Morrow, Tom Nagle, Yinbao Yang
This paper discusses an improved process integration method for GaN device fabrication that produces vias with the desired profile and with fewer potential reliability issues.top
© 2012 CS ManTech Conference
Ju-Ai Ruan, Craig Hall, Celicia Della-Morrow, Tom Nagle, Yinbao Yang
This paper discusses an improved process integration method for GaN device fabrication that produces vias with the desired profile and with fewer potential reliability issues.top
Dry Wide Recess Process Characterization for pHEMT
© 2012 CS ManTech Conference
Kevin Shu and Mark R. Tesauro
This paper details the characterization of a new dry plasma etch, wide recess process for pHEMT: SPTS CPX. This new dry plasma etch platform was introduced to increase pHEMT manufacturing capacity, and its capabilities needed to be examined prior to production.top
© 2012 CS ManTech Conference
Kevin Shu and Mark R. Tesauro
This paper details the characterization of a new dry plasma etch, wide recess process for pHEMT: SPTS CPX. This new dry plasma etch platform was introduced to increase pHEMT manufacturing capacity, and its capabilities needed to be examined prior to production.top
Set Up and Characterization of an Optical Wide Stepper Process for DR15 Technology as a Replacement for E-Beam Lithography
© 2012 CS ManTech Conference
Amy Zhou, Jerry Beene, Marcus King, Ming-Yih Kao, Hua-Tang Chen, Chris Puckett, Aaron Ferreira and Jan Campbell
This paper details the introduction of an optical process into the GaAs manufacturing line for the Dual Recess 0.15μm technology (DR15) to replace the e-beam lithographic process—the goal of this chance was to improve photolithographic throughput. Data can demonstrate that by utilizing the optical process a dramatic improvement in cycle time and wafer starts has been realized.top
© 2012 CS ManTech Conference
Amy Zhou, Jerry Beene, Marcus King, Ming-Yih Kao, Hua-Tang Chen, Chris Puckett, Aaron Ferreira and Jan Campbell
This paper details the introduction of an optical process into the GaAs manufacturing line for the Dual Recess 0.15μm technology (DR15) to replace the e-beam lithographic process—the goal of this chance was to improve photolithographic throughput. Data can demonstrate that by utilizing the optical process a dramatic improvement in cycle time and wafer starts has been realized.top
Assessing the Reliability Risk of a Maverick Manufacturing Anomaly
© 2012 CS ManTech Conference
William J. Roesch and David Littleton
This paper examines a methodology to address the reliability risk of maverick events during wafer fabrication, and uses data from an actual event to demonstrate use of the methodology.top
© 2012 CS ManTech Conference
William J. Roesch and David Littleton
This paper examines a methodology to address the reliability risk of maverick events during wafer fabrication, and uses data from an actual event to demonstrate use of the methodology.top
Bridging the Social Gap: Working Together for Continued Prosperity and Growth
© 2012 CS ManTech Conference
Ryan Snodgrass, Jinhong Yang
This paper discusses the differences and similarities between two working groups at technology companies: manufacturing equipment operators and engineers. This paper presents opportunities to change the working relationship between these groups to utilize and integrate unique knowledge and experiences that supports continued prosperity and innovation within the corporate structure.top
© 2012 CS ManTech Conference
Ryan Snodgrass, Jinhong Yang
This paper discusses the differences and similarities between two working groups at technology companies: manufacturing equipment operators and engineers. This paper presents opportunities to change the working relationship between these groups to utilize and integrate unique knowledge and experiences that supports continued prosperity and innovation within the corporate structure.top
A Robust, Non-Parametric Method to Identify Outliers and Improve Final Yield and Quality
© 2012 CS ManTech Conference
Neill Patterson
This paper Introduces a more robust, non-parametric algorithm that can better handle the wide variety of non-standard distributions seen in the semiconductor manufacturing industry. The algorithm can be used for data analysis purposes, as well as for actively eliminating outlier die at wafer sort.top
© 2012 CS ManTech Conference
Neill Patterson
This paper Introduces a more robust, non-parametric algorithm that can better handle the wide variety of non-standard distributions seen in the semiconductor manufacturing industry. The algorithm can be used for data analysis purposes, as well as for actively eliminating outlier die at wafer sort.top
Predicting, Validating, and Improving Yield of Multi-Chip RF Modules during Product Development
© 2012 CS ManTech Conference
James M. Eastham
Methods are discussed for modeling and validating RF module yield throughout product development. From the early concept phase to volume production, various techniques are proposed in an effort to provide accurate yield estimation and ensure RFIC modules are moved into production with predictable and acceptable yields.top
© 2012 CS ManTech Conference
James M. Eastham
Methods are discussed for modeling and validating RF module yield throughout product development. From the early concept phase to volume production, various techniques are proposed in an effort to provide accurate yield estimation and ensure RFIC modules are moved into production with predictable and acceptable yields.top
Hybrid X-Band Power Amplifier Using Commercially Available Discrete GaN FETs
GOMACTech 2012
Charles F. Campbell and Matthew Poulton
This paper describes the design and characterization of a highly integrated X-band power amplifier utilizing commercially available discrete GaN transistors. Measured results for the GaN power amplifier demonstrate an outpower of up to 76W with an associated gain and power-added efficiency of 8.9dB and 44%, respectively. top
GOMACTech 2012
Charles F. Campbell and Matthew Poulton
This paper describes the design and characterization of a highly integrated X-band power amplifier utilizing commercially available discrete GaN transistors. Measured results for the GaN power amplifier demonstrate an outpower of up to 76W with an associated gain and power-added efficiency of 8.9dB and 44%, respectively. top
Near-Junction Thermal Management in High-Power GaN HEMTs
GOMACTech 2012
D. C. Dumka, U. Chowdhury, J. L. Jimenez, T.-M. Chou, A. Ketterson, D. M. Fanning, B. Murdock D.Francis, F. Faili, F. Ejeckam
A process for near-junction thermal management in high-power GaN HEMTs is presented. A three-fold enhancement in the power handling by such GaN/Diamond wafers, compared to standard GaN/SiC wafers, is predicted. top
GOMACTech 2012
D. C. Dumka, U. Chowdhury, J. L. Jimenez, T.-M. Chou, A. Ketterson, D. M. Fanning, B. Murdock D.Francis, F. Faili, F. Ejeckam
A process for near-junction thermal management in high-power GaN HEMTs is presented. A three-fold enhancement in the power handling by such GaN/Diamond wafers, compared to standard GaN/SiC wafers, is predicted. top
State-of-the-Art E/D GaN Technology Based on an InAlN/AlN/GaN Heterostructure
GOMACTech 2012
Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-Quen Tserng, Shiping Guo, Xiang Gao, Patrick Fay, Grace Xing, Paul Saunier
State-of-the-art integrated E- and D-mode devices based on InAlN/AlN/GaN heterostructure are reported. A Ft of 261 and 278 GHz were achieved for (integrated)E- and D-mode devices. top
GOMACTech 2012
Michael Schuette, Andrew Ketterson, Edward Beam, Tso-Min Chou, Hua-Quen Tserng, Shiping Guo, Xiang Gao, Patrick Fay, Grace Xing, Paul Saunier
State-of-the-art integrated E- and D-mode devices based on InAlN/AlN/GaN heterostructure are reported. A Ft of 261 and 278 GHz were achieved for (integrated)E- and D-mode devices. top
Compact Highly Integrated X-Band Power Amplifier Using Commercially Available Discrete GaN FETs
2011 Asia-Pacific Microwave Conference, Melbourne, Australia
Charles F. Campbell and Matthew Poulton, TriQuint Semiconductor, Richardson, TX
This paper describes the design and characterization of a highly integrated X-band power amplifier that utilizes commercially available discrete GaN transistors. The compact design integrates all of the RF matching and bias circuitry on to er=36 circuit boards, one for the input and one for the output. This includes the DC blocks, RF bypasses and RF chokes. Dimensions for the complete single stage power amplifier are 9.8 x 8.6 mm2. Measured results for the GaN power amplifier under pulsed bias conditions demonstrate up to 66W output power with associated gain and power added efficiency of 8.3dB and 45% respectively. top
2011 Asia-Pacific Microwave Conference, Melbourne, Australia
Charles F. Campbell and Matthew Poulton, TriQuint Semiconductor, Richardson, TX
This paper describes the design and characterization of a highly integrated X-band power amplifier that utilizes commercially available discrete GaN transistors. The compact design integrates all of the RF matching and bias circuitry on to er=36 circuit boards, one for the input and one for the output. This includes the DC blocks, RF bypasses and RF chokes. Dimensions for the complete single stage power amplifier are 9.8 x 8.6 mm2. Measured results for the GaN power amplifier under pulsed bias conditions demonstrate up to 66W output power with associated gain and power added efficiency of 8.3dB and 45% respectively. top
Probe Based Simulation Technique for Modeling Saturated Power Amplifiers
Presented at the EuMW Conference, Manchester, England
Charles F. Campbell, October 2011, 4 pages.
This paper describes a probe based analysis technique for the simulation of saturated power amplifiers. The method is in-situ, compatible with linear & nonlinear simulation and accounts for the impact of network symmetry on the performance of the circuit. The load impedance is determined for every transistor cell in the circuit enabling the calculation of output power, network loss and drive margin for the entire amplifier. The technique is applied to a binary manifold typical of high frequency amplifiers, as well as a single stage GaN x-band high power amplifier design. Measured results for the GaN power amplifier at 9.4GHz under continuous wave conditions demonstrate 41.6W output power with associated gain and power added efficiency of 9.5dB and 44% respectively.top
Presented at the EuMW Conference, Manchester, England
Charles F. Campbell, October 2011, 4 pages.
This paper describes a probe based analysis technique for the simulation of saturated power amplifiers. The method is in-situ, compatible with linear & nonlinear simulation and accounts for the impact of network symmetry on the performance of the circuit. The load impedance is determined for every transistor cell in the circuit enabling the calculation of output power, network loss and drive margin for the entire amplifier. The technique is applied to a binary manifold typical of high frequency amplifiers, as well as a single stage GaN x-band high power amplifier design. Measured results for the GaN power amplifier at 9.4GHz under continuous wave conditions demonstrate 41.6W output power with associated gain and power added efficiency of 9.5dB and 44% respectively.top
High Efficiency, Wide Band 50 Watt, 28V InGaP/GaAs HBT MMIC
Presented at the EuMW Conference, Manchester, England
Wenlong Ma, Xiaopeng Sun, Philip Lam, Peter Hu, Jingshi Yao, Louis Liu, Frank Chau, Xiangkun Zhang, Barry Lin, October 2011, 4 pages.
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65% . Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).top
Presented at the EuMW Conference, Manchester, England
Wenlong Ma, Xiaopeng Sun, Philip Lam, Peter Hu, Jingshi Yao, Louis Liu, Frank Chau, Xiangkun Zhang, Barry Lin, October 2011, 4 pages.
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65% . Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).top
Analysis of the Unbalanced Feeding Effect on Discrete Device with Large Die Size
Presented at the EuMW Conference, Manchester, England
Qianli Mu, Howard Bartlow and Matthew Poulton, October 2011, 5 pages.
This paper focuses on analyzing the unbalanced feeding effect on RF power transistors, which can be generated from the input and output transition structures when they are connected to a relatively large size die. Such an effect can cause degradation of device’s RF performance. A TGF2023-10 transistor assembled inside a PowerBandTM package is used as an example to illustrate the effect. By modeling the input and output transition structures as one-port to multi-port transition networks, parameters based on the total difference of the transmission and reflection coefficients on the multi-port side are defined to quantify the unbalanced feeding effect.top
Presented at the EuMW Conference, Manchester, England
Qianli Mu, Howard Bartlow and Matthew Poulton, October 2011, 5 pages.
This paper focuses on analyzing the unbalanced feeding effect on RF power transistors, which can be generated from the input and output transition structures when they are connected to a relatively large size die. Such an effect can cause degradation of device’s RF performance. A TGF2023-10 transistor assembled inside a PowerBandTM package is used as an example to illustrate the effect. By modeling the input and output transition structures as one-port to multi-port transition networks, parameters based on the total difference of the transmission and reflection coefficients on the multi-port side are defined to quantify the unbalanced feeding effect.top
GaN & GaAs MMIC and Module Technology Supporting the Needs of Phased-Array Radars
Defence & Security Forum at the EuMW Conference, Manchester, England
Dean White, October 2011, 16 pages.
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Defence & Security Forum at the EuMW Conference, Manchester, England
Dean White, October 2011, 16 pages.
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GaAs Panel Session
Presented at the EuMW Conference, Manchester, England
Mike Peters, October 2011, 15 pages.
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Presented at the EuMW Conference, Manchester, England
Mike Peters, October 2011, 15 pages.
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Linear Power Amplifiers and Transmitter Modules for Mobile Applications
Presented at the 2010 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) in Shanghai, China.
Wen Chen, Haitao Zhang, Mike Cardullo, Andy Forbes, Ting Xiong, Ray Pavio and presented by Wen Chen
The advanced modulation formats used in 3G and 4G mobile systems have pushed the need for improved power amplifier linearity. The multi-function capability and sleeker form factor design of today's smart phones have added more stringent requirements to the size and current consumption of power amplifier modules. This paper discusses some of the linear power amplifier module market trends and the technical challenges. It also presents several of TriQuint’s solutions, including the Tritium™ power amplifier and duplexer module (PAD) family, the Triton™ power amplifier module (PAM) family and WLAN front end modules (FEM) for handset.top
Presented at the 2010 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) in Shanghai, China.
Wen Chen, Haitao Zhang, Mike Cardullo, Andy Forbes, Ting Xiong, Ray Pavio and presented by Wen Chen
The advanced modulation formats used in 3G and 4G mobile systems have pushed the need for improved power amplifier linearity. The multi-function capability and sleeker form factor design of today's smart phones have added more stringent requirements to the size and current consumption of power amplifier modules. This paper discusses some of the linear power amplifier module market trends and the technical challenges. It also presents several of TriQuint’s solutions, including the Tritium™ power amplifier and duplexer module (PAD) family, the Triton™ power amplifier module (PAM) family and WLAN front end modules (FEM) for handset.top
Advanced Reliability Aspects of GaN FETs
Presented at the 2010 EuMW Week in Paris, France
Written by Jose Jimenez and presented by Anthony Balistreri
This presentation outlines why TriQuint is working on GaN technology, provides an overview of TriQuint’s GaN technology and discusses GaN reliability challenges.top
Presented at the 2010 EuMW Week in Paris, France
Written by Jose Jimenez and presented by Anthony Balistreri
This presentation outlines why TriQuint is working on GaN technology, provides an overview of TriQuint’s GaN technology and discusses GaN reliability challenges.top
Tunable acoustic RF-filters: Discussion of Requirements and Potential Physical Embodiments
Presented at the 2010 EuMW Week in Paris, France
Robert Aigner
Multi-band / multi-system mobile phones require a complex RF-frontend architecture. Part count has increased to a point where adding switches and whole signal branches for an additional band seems no longer cost effective. Most of the active components can be adopted to work over a sufficiently wide frequency spectrum in order to cover multiple bands within one and the same circuit. This is not true for established RF filters and duplexers which are highly frequency selective but limited to operate at a fixed frequency band. It is highly desirable to create a technology which allows tuning a narrowband filter to a desired center frequency by means of an electrical control input.top
Presented at the 2010 EuMW Week in Paris, France
Robert Aigner
Multi-band / multi-system mobile phones require a complex RF-frontend architecture. Part count has increased to a point where adding switches and whole signal branches for an additional band seems no longer cost effective. Most of the active components can be adopted to work over a sufficiently wide frequency spectrum in order to cover multiple bands within one and the same circuit. This is not true for established RF filters and duplexers which are highly frequency selective but limited to operate at a fixed frequency band. It is highly desirable to create a technology which allows tuning a narrowband filter to a desired center frequency by means of an electrical control input.top
High-Isolation Low-Loss SP7T pHEMT Switch Suitable for Antenna Switch Modules
Presented at the 2010 EuMW Week in Paris, France
Michael D. Yore, Corey A. Nevers, Philippe Cortese
In this paper the design, fabrication and measurement of a high performance SP7T GaAs pHEMT switch for cellular phone applications is discussed. The antenna switch design uses a state of the art E/D-mode pHEMT process with an Ron*Coff Figure of Merit of 145 Ohm-fF. Excellent broadband insertion loss measurements across all cellular bands are less than 0.5dB, isolations are greater than 32dB while maintaining minimum harmonic distortion levels. Matching the switch to specific bands yielded insertion losses of 0.35dB at 0.915 GHz and 0.4dB at 1.95 GHz.top
Presented at the 2010 EuMW Week in Paris, France
Michael D. Yore, Corey A. Nevers, Philippe Cortese
In this paper the design, fabrication and measurement of a high performance SP7T GaAs pHEMT switch for cellular phone applications is discussed. The antenna switch design uses a state of the art E/D-mode pHEMT process with an Ron*Coff Figure of Merit of 145 Ohm-fF. Excellent broadband insertion loss measurements across all cellular bands are less than 0.5dB, isolations are greater than 32dB while maintaining minimum harmonic distortion levels. Matching the switch to specific bands yielded insertion losses of 0.35dB at 0.915 GHz and 0.4dB at 1.95 GHz.top
Wideband High Power GaN on SiC SPDT Switch MMICs
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Charles F. Campbell and Deep C. Dumka
In this paper, the design and performance of three wideband PDT switch MMICs utilizing GaN on SiC technology are presented. The circuits are designed to cover frequency ranges of DC-6 GHz, DC-12 GHz and DC-18 GHz with input power handling optimized over the specified bandwidth. Measured infixture s-parameter data demonstrates a maximum insertion loss of 0.7 dB, 1.0 dB and 1.5 dB, respectively for the 6 GHz, 12 GHz and 18 GHz designs. Measured continuous wave power data demonstrates typical input RF power handling of 40 W, 15 W and 10 W, respectively for the 6 GHz, 12 GHz and 18 GHz MMICs.top
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Charles F. Campbell and Deep C. Dumka
In this paper, the design and performance of three wideband PDT switch MMICs utilizing GaN on SiC technology are presented. The circuits are designed to cover frequency ranges of DC-6 GHz, DC-12 GHz and DC-18 GHz with input power handling optimized over the specified bandwidth. Measured infixture s-parameter data demonstrates a maximum insertion loss of 0.7 dB, 1.0 dB and 1.5 dB, respectively for the 6 GHz, 12 GHz and 18 GHz designs. Measured continuous wave power data demonstrates typical input RF power handling of 40 W, 15 W and 10 W, respectively for the 6 GHz, 12 GHz and 18 GHz MMICs.top
Wideband Power Amplifier MMICs Utilizing GaN on SiC
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Eli Reese, Donald Allen, Cathy Lee, and Tuong Nguyen
In this paper the application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 – 18 GHz 11W power amplifier MMIC is presented as an example.top
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Eli Reese, Donald Allen, Cathy Lee, and Tuong Nguyen
In this paper the application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 – 18 GHz 11W power amplifier MMIC is presented as an example.top
Generation 2 High Voltage Heterojunction Bipolar Transistor Technology for High Efficiency Base Station Power Amplifiers
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Thomas Landon, Joe Delaney, Craig Steinbeiser, Oleh Krutko, Roger Branson, Rached Hajji, Preston Page, Sam Wey, Craig Hall, and Larry Witkowski.
This paper explores a new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of operating with supply voltages up to 32 V. Generation 2 HVHBT technology maintains the same high level of efficiency and compatibility with Digital Pre-Distortion (DPD) techniques but has higher gain, higher power density and greater tolerance to load mismatch and input overdrive. Two discrete power transistors, 120 W and 220 W, were developed using Generation 2 HVHBT technology for 2.1 GHz WCDMA/LTE applications. Both 2x120 W and 2x220 W Doherty amplifiers were designed to demonstrate gain approaching 14 dB and efficiency in excess of 55% at 6 dB operating back-off.top
Presented at the 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA
Thomas Landon, Joe Delaney, Craig Steinbeiser, Oleh Krutko, Roger Branson, Rached Hajji, Preston Page, Sam Wey, Craig Hall, and Larry Witkowski.
This paper explores a new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of operating with supply voltages up to 32 V. Generation 2 HVHBT technology maintains the same high level of efficiency and compatibility with Digital Pre-Distortion (DPD) techniques but has higher gain, higher power density and greater tolerance to load mismatch and input overdrive. Two discrete power transistors, 120 W and 220 W, were developed using Generation 2 HVHBT technology for 2.1 GHz WCDMA/LTE applications. Both 2x120 W and 2x220 W Doherty amplifiers were designed to demonstrate gain approaching 14 dB and efficiency in excess of 55% at 6 dB operating back-off.top
Semiconductor Technology Impact on Microwave and Millimeter Wave Markets
Presented at the 2010- IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Anaheim, CA (USA)
Glen Riley, © 2010 TriQuint Semiconductor, Inc., 7 slides.
This presentation is a summary of the role of Gallium Arsenide technology advantages in RF communications.top
Presented at the 2010- IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Anaheim, CA (USA)
Glen Riley, © 2010 TriQuint Semiconductor, Inc., 7 slides.
This presentation is a summary of the role of Gallium Arsenide technology advantages in RF communications.top
60 GHz Power Amplifier Design for Wireless HDMI (WPAN)
Presented at the 2010- IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Anaheim, CA (USA)
Ken Mays and Michael Thompson , © 2010 TriQuint Semiconductor, Inc., 22 slides.
This presentation demonstrates a Complete MMIC ADS Desktop Design Flow Showcasing the performance of TriQuint’s TQP13-N foundry process.top
Presented at the 2010- IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Anaheim, CA (USA)
Ken Mays and Michael Thompson , © 2010 TriQuint Semiconductor, Inc., 22 slides.
This presentation demonstrates a Complete MMIC ADS Desktop Design Flow Showcasing the performance of TriQuint’s TQP13-N foundry process.top
A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 µm Optical Lithography pHEMT Process
Presented at IEEE COMCAS 2009, Tel Aviv, Israel
Ken Mays, October, 2009 5 pages.
A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier. top
Presented at IEEE COMCAS 2009, Tel Aviv, Israel
Ken Mays, October, 2009 5 pages.
A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier. top
Low Cost and High Performance MMIC Solutions for Automotive Radar
Presented at the 2009 IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Boston, MA (USA)
Dr. Markus Behet, © 2009 TriQuint Semiconductor, Inc., 18 slides.
This presentation is a summary of key requirements and the advantages that Gallium Arsenide (GaAs) offers 77 GHz automotive radar systems designers and equipment manufacturers.top
Presented at the 2009 IEEE MTT-S International Microwave Symposium; a MicroApps seminar; Boston, MA (USA)
Dr. Markus Behet, © 2009 TriQuint Semiconductor, Inc., 18 slides.
This presentation is a summary of key requirements and the advantages that Gallium Arsenide (GaAs) offers 77 GHz automotive radar systems designers and equipment manufacturers.top
SiC Substrate Via Etch Process Optimization
Presented at the 2009 CS Mantech Conference, Tampa, FLorida
Ju-Ai Ruan, Sam Roadman, Cathy Lee, Cary Sellers, Mike Regan, May 2009, 3 pages.
SiC etch rates and etch selectivity to GaN have been studied under a range of RF plasma power conditions. Slightly higher etch rate and higher etch selectivity were obtained at increased coil RF power. Higher etch rate was also obtained at increased platen RF power, but at the sacrifice of decreasing etch selectivity. Substantial pillar formation was observed when coil RF power is below certain limit. Pillar formation during SiC etches due to variation of process conditions was also studied with methods to reduce pillar formation discussed. We observed that by properly modifying pre-etch clean and etch processes, systematic pillar formation can be avoided. top
Presented at the 2009 CS Mantech Conference, Tampa, FLorida
Ju-Ai Ruan, Sam Roadman, Cathy Lee, Cary Sellers, Mike Regan, May 2009, 3 pages.
SiC etch rates and etch selectivity to GaN have been studied under a range of RF plasma power conditions. Slightly higher etch rate and higher etch selectivity were obtained at increased coil RF power. Higher etch rate was also obtained at increased platen RF power, but at the sacrifice of decreasing etch selectivity. Substantial pillar formation was observed when coil RF power is below certain limit. Pillar formation during SiC etches due to variation of process conditions was also studied with methods to reduce pillar formation discussed. We observed that by properly modifying pre-etch clean and etch processes, systematic pillar formation can be avoided. top
Influence of Dielectric Plasma Etch Source for pHEMT Device Performance
Presented at the 2009 CS Mantech Conference, Tampa, Florida
F.S. Pool, Andrew T. Ping, and Michele Wilson, May 2009, 3 pages.
PHEMT device parametric performance was improved by transfer from a transformer coupled plasma source to an RF helicon wave high density plasma source for the oxide dielectric etch prior to ohmic metal deposition. Process stability and uniformity were enhanced leading a higher yielding product with a wider process window. Significant improvement was measured for device parameters such as contact resistance, on resistance, and transconductance. Evaluation of etch source differences were investigated by examining surface damage. top
Presented at the 2009 CS Mantech Conference, Tampa, Florida
F.S. Pool, Andrew T. Ping, and Michele Wilson, May 2009, 3 pages.
PHEMT device parametric performance was improved by transfer from a transformer coupled plasma source to an RF helicon wave high density plasma source for the oxide dielectric etch prior to ohmic metal deposition. Process stability and uniformity were enhanced leading a higher yielding product with a wider process window. Significant improvement was measured for device parameters such as contact resistance, on resistance, and transconductance. Evaluation of etch source differences were investigated by examining surface damage. top
High-Volume 0.25 µm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography
Presented at the 2009 CS Mantech Conference, Tampa, Florida
Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger, May 2009, 4 pages.
TriQuint has developed a 150 mm high-volume 0.25 µm enhancement / depletion (E/D)-mode pseudomorphic highelectron mobility (pHEMT) AlGaAs / InGaAs based transistor process. Released as TQP25, the 0.25 µm gate length target is possible by utilizing a sidewall spacer process and is a hybrid of TQPED (0.5 µm) and the TQP13 (0.13 µm) pHEMT processes from TriQuint. Typical Depletion-FET (DFET) parameters include a 50 GHz unity current gain cut-off frequency (Ft), -900 mV pinchoff voltage, 550 mA/mm Imax (Vgs = 0.9V), 1.0 W- mm on resistance, and a 12 V minimum breakdown voltage. Additionally, the TQP25 process presented here includes a 0.35 µm Enhancement-FET (EFET) not typical at this technology node. Nominal EFET parameters are a 45 GHz Ft, a 300 mV threshold voltage, 1.3 W-mm on-resistance, and a 12 V minimum breakdown voltage. Passive components include two thin film resistor options (50 W/square and 1KW/square), a 0.62 fF/µm2 MIM capacitor and 1 local layer of evaporated interconnect and 1 global planarized plated metal layer. TQP25 allows designers to create circuits ranging in diverse applications from the cellular band to Ku-band.top
Presented at the 2009 CS Mantech Conference, Tampa, Florida
Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger, May 2009, 4 pages.
TriQuint has developed a 150 mm high-volume 0.25 µm enhancement / depletion (E/D)-mode pseudomorphic highelectron mobility (pHEMT) AlGaAs / InGaAs based transistor process. Released as TQP25, the 0.25 µm gate length target is possible by utilizing a sidewall spacer process and is a hybrid of TQPED (0.5 µm) and the TQP13 (0.13 µm) pHEMT processes from TriQuint. Typical Depletion-FET (DFET) parameters include a 50 GHz unity current gain cut-off frequency (Ft), -900 mV pinchoff voltage, 550 mA/mm Imax (Vgs = 0.9V), 1.0 W- mm on resistance, and a 12 V minimum breakdown voltage. Additionally, the TQP25 process presented here includes a 0.35 µm Enhancement-FET (EFET) not typical at this technology node. Nominal EFET parameters are a 45 GHz Ft, a 300 mV threshold voltage, 1.3 W-mm on-resistance, and a 12 V minimum breakdown voltage. Passive components include two thin film resistor options (50 W/square and 1KW/square), a 0.62 fF/µm2 MIM capacitor and 1 local layer of evaporated interconnect and 1 global planarized plated metal layer. TQP25 allows designers to create circuits ranging in diverse applications from the cellular band to Ku-band.top
High Linearity 40 Watt, 28V InGaP/GaAs HBT
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Wenlong Ma, Xiaopeng Sun, Peter Hu, Jingshi Yao, Barry Lin, Hin-Fai Chau, Louis Liu, and Chien-Ping Lee, June 2008, 4 pages.
This paper reports on a 40W high linearity InGaP/ GaAs 28V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint-WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1dB of the device reaches 46dBm (40W), with a gain around 14.5dB. With WCDMA one carrier modulation (PAR=8.5dBc), the device achieves an ACLR of -50dBC and an efficiency of 19.5% at an output power of 37.5dBm (5.6W) at 920-960MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.top
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Wenlong Ma, Xiaopeng Sun, Peter Hu, Jingshi Yao, Barry Lin, Hin-Fai Chau, Louis Liu, and Chien-Ping Lee, June 2008, 4 pages.
This paper reports on a 40W high linearity InGaP/ GaAs 28V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint-WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1dB of the device reaches 46dBm (40W), with a gain around 14.5dB. With WCDMA one carrier modulation (PAR=8.5dBc), the device achieves an ACLR of -50dBC and an efficiency of 19.5% at an output power of 37.5dBm (5.6W) at 920-960MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.top
A Scalable High Power Nonlinear HBT Model for a 28V HVHBT
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Xiangkun Zhang, Frank Chau, Barry Lin, Xiaopeng Sun, Wenlong Ma, Peter Hu, Jingshi Yao, and Chien-Ping Lee, June 2008, 4 pages
A scalable nonlinear HBT model for a Building Block (1BB) of 28V InGaP/GaAs HBT is presented. It is based on the AgilentHBT (AHBT) model. The building block consists of 32 finger HBTs, an input pre-matching circuit and a transistor used as an emitter follower in the related bias circuit. The P1dB of 1BB is 32.5dBm. The model can account not only for DC, thermal, junction capacitances, S-parameters but also RF power, gain, IM3, operation current and collector efficiency. A good match between simulation and measurement has been achieved. By using a multiplicity parameter the model can accurately predict the DC and nonlinear RF performance of two Building Blocks (64 fingers, P1dB of 35.7dBm) and four Building Blocks (128 fingers, P1dB of 38.2dBm).top
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Xiangkun Zhang, Frank Chau, Barry Lin, Xiaopeng Sun, Wenlong Ma, Peter Hu, Jingshi Yao, and Chien-Ping Lee, June 2008, 4 pages
A scalable nonlinear HBT model for a Building Block (1BB) of 28V InGaP/GaAs HBT is presented. It is based on the AgilentHBT (AHBT) model. The building block consists of 32 finger HBTs, an input pre-matching circuit and a transistor used as an emitter follower in the related bias circuit. The P1dB of 1BB is 32.5dBm. The model can account not only for DC, thermal, junction capacitances, S-parameters but also RF power, gain, IM3, operation current and collector efficiency. A good match between simulation and measurement has been achieved. By using a multiplicity parameter the model can accurately predict the DC and nonlinear RF performance of two Building Blocks (64 fingers, P1dB of 35.7dBm) and four Building Blocks (128 fingers, P1dB of 38.2dBm).top
Getting to Zero – Methods of Reducing Defects
Presented at the 2001 GaAs REL Workshop, Baltimore, MD
Bill Roesch, October 2001, 6 pages.
This publication is a summary of methodology and ten separate improvement examples for improving quality.top
Presented at the 2001 GaAs REL Workshop, Baltimore, MD
Bill Roesch, October 2001, 6 pages.
This publication is a summary of methodology and ten separate improvement examples for improving quality.top
Volume & Quality Impacts on Reliability: A New Game for GaAs
Presented at the 2000 GaAs REL Workshop, Seattle, WA
Bill Roesch, November 2000, 5 pages.
This publication provides information on the causes of reliability failure in actual use and the activities that can really improve reliability. The effect of volume on determining failure causes and corrective action is investigated.top
Presented at the 2000 GaAs REL Workshop, Seattle, WA
Bill Roesch, November 2000, 5 pages.
This publication provides information on the causes of reliability failure in actual use and the activities that can really improve reliability. The effect of volume on determining failure causes and corrective action is investigated.top
Failure Analysis of CDM ESD Damage in a GaAs RFIC
Presented at the 2000 International Symposium for Testing and Failure Analysis, Bellevue, WA
Amy Poe, Steve Brockett, and Tony Rubalcava, November 2000, 6 pages.
This publication presents the importance of Charged Device Model (CDM) ESD testing for radio frequency devices. A novel deprocessing technique is described for laser induced delayering as well as various ESD measurements.top
Presented at the 2000 International Symposium for Testing and Failure Analysis, Bellevue, WA
Amy Poe, Steve Brockett, and Tony Rubalcava, November 2000, 6 pages.
This publication presents the importance of Charged Device Model (CDM) ESD testing for radio frequency devices. A novel deprocessing technique is described for laser induced delayering as well as various ESD measurements.top
Assessing Circuit Hermeticity by Electrolysis
Presented at the 2000 GaAs Mantech Conference, Washington DC
Bill Roesch, Shawn Peterson, Amy Poe, Steve Brockett, Steve Mahon, and Jim Bruckner, May 2000, 4 pages.
This work describes a corrective action project to improve circuit hermeticity. The objective was to provide quick feedback on experiments to improve performance in biased humidity environments. Hermeticity was evaluated quickly by using current flow (electrolysis) in water applied directly to the surface of the devices. Weaknesses in device construction were discovered, and effective solutions were evaluated, by using the electrolysis technique. top
Presented at the 2000 GaAs Mantech Conference, Washington DC
Bill Roesch, Shawn Peterson, Amy Poe, Steve Brockett, Steve Mahon, and Jim Bruckner, May 2000, 4 pages.
This work describes a corrective action project to improve circuit hermeticity. The objective was to provide quick feedback on experiments to improve performance in biased humidity environments. Hermeticity was evaluated quickly by using current flow (electrolysis) in water applied directly to the surface of the devices. Weaknesses in device construction were discovered, and effective solutions were evaluated, by using the electrolysis technique. top
Moisture Resistance of GaAs ICs: Breaking the 5,000 PPM Barrier
Presented at the 1993 Government Microcircuits Applications Conference (GOMAC), New Orleans, LA
Bill Roesch & Bharati Ingle, November 1993, 3 pages.
This report summarizes engineering test results obtained on a 132 pin multilayer ceramic cavity packages with custom GaAs ASIC devices. The testing was developed to intentionally induce worst case conditions that exceed any environments expected under normal use. The results provide conclusive evidence that high moisture content does not affect GaAs devices electrically or visually.top
Presented at the 1993 Government Microcircuits Applications Conference (GOMAC), New Orleans, LA
Bill Roesch & Bharati Ingle, November 1993, 3 pages.
This report summarizes engineering test results obtained on a 132 pin multilayer ceramic cavity packages with custom GaAs ASIC devices. The testing was developed to intentionally induce worst case conditions that exceed any environments expected under normal use. The results provide conclusive evidence that high moisture content does not affect GaAs devices electrically or visually.top
Thermal Excursion Accelerating Factors
Presented at the 1999 GaAs REL Workshop, Atlanta, GA
Bill Roesch, October 1998, 5 pages.
This publication provides information on a failure mechanism that is accelerated by thermal excursions instead of high temperatures. The failure mechanism is described and acceleration factors are investigated.top
Presented at the 1999 GaAs REL Workshop, Atlanta, GA
Bill Roesch, October 1998, 5 pages.
This publication provides information on a failure mechanism that is accelerated by thermal excursions instead of high temperatures. The failure mechanism is described and acceleration factors are investigated.top
Process Reliability Qualification Experiences During a Fab Relocation
Presented at the 1998 GaAs REL Workshop, Atlanta, GA
Bill Roesch, Susan Bumgarner, Lita O. Monaghan, Tony Rubalcava, Denise Riley, Donna Cruse, Jim Cartwright, October 1998, 4 pages.
This publication provides information on the methodology, implementation, and results of reliability assessments enacted as part of a new facility qualification. top
Presented at the 1998 GaAs REL Workshop, Atlanta, GA
Bill Roesch, Susan Bumgarner, Lita O. Monaghan, Tony Rubalcava, Denise Riley, Donna Cruse, Jim Cartwright, October 1998, 4 pages.
This publication provides information on the methodology, implementation, and results of reliability assessments enacted as part of a new facility qualification. top
Gallium Arsenide IC Reliability
Tutorial Presentation at the International Reliability Physics Symposium, Monterey, CA
Bill Roesch, April 1988, 12 pages.
This tutorial provides an overview of MesFET IC reliability technology. It includes information on thermal resistance, failure mechanisms, packaging, GaAs failure analysis, ESD and radiation performance. A systematic program of reliability growth is explained, and the general level of GaAs IC reliability is presented. Comparisons are made with silicon technology.top
Tutorial Presentation at the International Reliability Physics Symposium, Monterey, CA
Bill Roesch, April 1988, 12 pages.
This tutorial provides an overview of MesFET IC reliability technology. It includes information on thermal resistance, failure mechanisms, packaging, GaAs failure analysis, ESD and radiation performance. A systematic program of reliability growth is explained, and the general level of GaAs IC reliability is presented. Comparisons are made with silicon technology.top
Light Emission as an Analysis Tool for GaAs ICs
Presented at the 1996 GaAs REL Workshop, Orlando, FL
Bill Roesch, October 1996, 4 pages.
This publication demonstrates how light emission microscopy can be used to analyze GaAs ICs during characterization, degradation, and wearout. top
Presented at the 1996 GaAs REL Workshop, Orlando, FL
Bill Roesch, October 1996, 4 pages.
This publication demonstrates how light emission microscopy can be used to analyze GaAs ICs during characterization, degradation, and wearout. top
GaAs IC Reliability in Plastic Packages
Presented at the 1995 GaAs REL Workshop, San Diego, CA
Bill Roesch, October 1995, 6 pages.
The intent of this series of investigations is to demonstrate the immunity of GaAs IC technology to reliability degradation in plastic packaging. For example: worst-case scenarios are used to show complete immunity to high humidity environments. Additionally, typical package evaluation testing is demonstrated as part of an industry standard set of package-related qualification tests.top
Presented at the 1995 GaAs REL Workshop, San Diego, CA
Bill Roesch, October 1995, 6 pages.
The intent of this series of investigations is to demonstrate the immunity of GaAs IC technology to reliability degradation in plastic packaging. For example: worst-case scenarios are used to show complete immunity to high humidity environments. Additionally, typical package evaluation testing is demonstrated as part of an industry standard set of package-related qualification tests.top
Accelerated Effects of Hydrogen on GaAs MesFETs
Presented at the 1994 GaAs REL Workshop, Philadelphia, PA
Bill Roesch, October 1994, 6 pages.
Several experiments were conducted which have all indicated that moderate to high levels of hydrogen causes distinct changes in MesFETs under accelerated temperatures. The changes were found to be generally opposite of those previously reported for hydrogen degradation on GaAs devices. The changes also took significantly longer to manifest than has been reported for hydrogen degradation. top
Presented at the 1994 GaAs REL Workshop, Philadelphia, PA
Bill Roesch, October 1994, 6 pages.
Several experiments were conducted which have all indicated that moderate to high levels of hydrogen causes distinct changes in MesFETs under accelerated temperatures. The changes were found to be generally opposite of those previously reported for hydrogen degradation on GaAs devices. The changes also took significantly longer to manifest than has been reported for hydrogen degradation. top
Humidity Resistance of GaAs ICs
Presented at the 1994 GaAs IC Symposium, Philadelphia, PA
Bill Roesch, October 1994, 4 pages.
A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This paper provides evidence that GaAs devices are ready for low-cost non-hermetic packages and GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.top
Presented at the 1994 GaAs IC Symposium, Philadelphia, PA
Bill Roesch, October 1994, 4 pages.
A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This paper provides evidence that GaAs devices are ready for low-cost non-hermetic packages and GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.top
GaAs IC Reliability Qualification by Levels
Presented at the Advanced Microelectronic Qualification/Reliability Workshop, Newton, MA
Bill Roesch, August 1994, 3 pages.
New methods will have to be developed in order to assure adequate qualification of ICs. This publication describes several aspects of GaAs device reliability which are overlooked. This discussion describes multiple scenarios of reliability qualification options.top
Presented at the Advanced Microelectronic Qualification/Reliability Workshop, Newton, MA
Bill Roesch, August 1994, 3 pages.
New methods will have to be developed in order to assure adequate qualification of ICs. This publication describes several aspects of GaAs device reliability which are overlooked. This discussion describes multiple scenarios of reliability qualification options.top
Measuring GaAs Temperatures: Round Robin Results
Presented at the 1993 GaAs REL Workshop, San José, CA
Bill Roesch, October 1993, 4 pages.
A thermal test die was designed and distributed to 13 companies interested in measuring GaAs thermal resistance. The findings indicate that thermal resistance is not measured uniformly among companies working with GaAs devices.top
Presented at the 1993 GaAs REL Workshop, San José, CA
Bill Roesch, October 1993, 4 pages.
A thermal test die was designed and distributed to 13 companies interested in measuring GaAs thermal resistance. The findings indicate that thermal resistance is not measured uniformly among companies working with GaAs devices.top
GaAs IC Reliability, The Next Generation
Presented at the 1993 GaAs IC Symposium, San José, CA
Bill Roesch, October 1993, 4 pages.
A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MesFET integrated circuits in particular. Comparisons to silicon reliability history, and between old and new philosophies are made.top
Presented at the 1993 GaAs IC Symposium, San José, CA
Bill Roesch, October 1993, 4 pages.
A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MesFET integrated circuits in particular. Comparisons to silicon reliability history, and between old and new philosophies are made.top
Burn-in of GaAs ICs
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, October 1992, 2 pages.
This discussion offers data in the following four areas indicating why burn-in should not be performed on GaAs ICs: 1) GaAs devices have no early failures, 2) The failure mechanisms of GaAs and Si ICs are different, 3) Burn-in reduces GaAs lifetimes, and 4) Burn-in reduces GaAs mechanical quality. top
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, October 1992, 2 pages.
This discussion offers data in the following four areas indicating why burn-in should not be performed on GaAs ICs: 1) GaAs devices have no early failures, 2) The failure mechanisms of GaAs and Si ICs are different, 3) Burn-in reduces GaAs lifetimes, and 4) Burn-in reduces GaAs mechanical quality. top
GaAs IC Reliability Returns: A Story of Abuse
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, Tony Rubalcava, and Ross Winters, October 1992, 4 pages.
Device application has been largely ignored as a factor influencing reliability. Application effects are investigated through examination of several aspects of field returns. The results of compiling all the reliability returns for six years of are presented and a guide for GaAs IC application is suggested. top
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, Tony Rubalcava, and Ross Winters, October 1992, 4 pages.
Device application has been largely ignored as a factor influencing reliability. Application effects are investigated through examination of several aspects of field returns. The results of compiling all the reliability returns for six years of are presented and a guide for GaAs IC application is suggested. top
Assessing Reliability of GaAs Substrate Vias
Presented at the 1992 GaAs MANTECH Conference, San Antonio, TX
Bill Roesch, April 1992, 4 pages.
These test results indicate that wet-etch and laser-drilled vias are not susceptible to mechanical damage induced by thermal cycling and thermal shock. Novel structures are successful at detecting cracks and are also useful in assessing via over-etching. top
Presented at the 1992 GaAs MANTECH Conference, San Antonio, TX
Bill Roesch, April 1992, 4 pages.
These test results indicate that wet-etch and laser-drilled vias are not susceptible to mechanical damage induced by thermal cycling and thermal shock. Novel structures are successful at detecting cracks and are also useful in assessing via over-etching. top
Long-Term Effects of Sidegating On GaAs MesFETs
Presented at the 1992 International Reliability Physics Symposium, San Diego CA
Hema Cholan, Douglas Stunkard, Tony Rubalcava, March 1992, 5 pages.
An impediment to widespread VLSI implementation of GaAs devices is sidegating. Several processing and design variations which influence circuit immunity to sidegating are examined over the lifetimes of MesFETs. Conclusive evidence shows that sidegating effects will not grow worse as devices wear out.top
Presented at the 1992 International Reliability Physics Symposium, San Diego CA
Hema Cholan, Douglas Stunkard, Tony Rubalcava, March 1992, 5 pages.
An impediment to widespread VLSI implementation of GaAs devices is sidegating. Several processing and design variations which influence circuit immunity to sidegating are examined over the lifetimes of MesFETs. Conclusive evidence shows that sidegating effects will not grow worse as devices wear out.top
A Novel Circuit Design for GaAs Thermal Test Dice
Presented at the 1991 GaAs REL Workshop, Monterey, CA
Bill Roesch, October 1991, 4 pages.
Thermal test dice are used to evaluate IC assemblies. This circuit incorporates several new features, for example, an array of heaters or power dissipation elements. The array offers distinct advantages over designs using fewer, large heating resistors, for example, void or anomaly detection in the die attach or package material. top
Presented at the 1991 GaAs REL Workshop, Monterey, CA
Bill Roesch, October 1991, 4 pages.
Thermal test dice are used to evaluate IC assemblies. This circuit incorporates several new features, for example, an array of heaters or power dissipation elements. The array offers distinct advantages over designs using fewer, large heating resistors, for example, void or anomaly detection in the die attach or package material. top
Finding Low Activation Energy Failure Mechanisms
Presented at the Advanced Microelectronics Technology Qualification, Reliability, and Logistics Workshop, Seattle WA
Bill Roesch, August 1991, 4 pages.
This study addresses the low activation energy possibility by describing six different methodologies. Results of millions of test hours and analysis of field returns indicate that low activation energy failure mechanisms are very unlikely for gallium arsenide devices. top
Presented at the Advanced Microelectronics Technology Qualification, Reliability, and Logistics Workshop, Seattle WA
Bill Roesch, August 1991, 4 pages.
This study addresses the low activation energy possibility by describing six different methodologies. Results of millions of test hours and analysis of field returns indicate that low activation energy failure mechanisms are very unlikely for gallium arsenide devices. top
Burn-In For GaAs ICs: Another $600 Hammer?
Presented at the Advanced Microelectronics Technology Qualification, Reliability & Logistics Workshop, Seattle WA
Richard Allen, Brian Bird, and Patrick Hamilton, August 1991, 6 pages.
This paper presents the results of a nine-month, 100% burn-in program. Over 5000 digital GaAs ICs were submitted to the screen. The paper considers the economics of burn-in, and suggests a generalized way to evaluate the cost-benefit tradeoffs of specifying 100% burn-in. top
Presented at the Advanced Microelectronics Technology Qualification, Reliability & Logistics Workshop, Seattle WA
Richard Allen, Brian Bird, and Patrick Hamilton, August 1991, 6 pages.
This paper presents the results of a nine-month, 100% burn-in program. Over 5000 digital GaAs ICs were submitted to the screen. The paper considers the economics of burn-in, and suggests a generalized way to evaluate the cost-benefit tradeoffs of specifying 100% burn-in. top
Reliability Of Plastic Packaging For GaAs ICs
Presented at the MANTECH Conference, Reno, NV
Bill Roesch, Tony Rubalcava, and Bharati Ingle, April 1990, 4 pages.
This study summarizes preliminary feasibility evaluations on GaAs FETs and ICs encapsulated in plastic packages. These initial results indicate that GaAs devices can be manufactured in plastic and can reliably withstand moisture penetration and thermal excursions. top
Presented at the MANTECH Conference, Reno, NV
Bill Roesch, Tony Rubalcava, and Bharati Ingle, April 1990, 4 pages.
This study summarizes preliminary feasibility evaluations on GaAs FETs and ICs encapsulated in plastic packages. These initial results indicate that GaAs devices can be manufactured in plastic and can reliably withstand moisture penetration and thermal excursions. top
Predicting GaAs Reliability With Accelerated Testing
Invited Paper, presented at the MANTECH Conference, Reno, NV
Bill Roesch and Richard Allen, April 1990, 1 page Abstract.
This abstract briefly discusses the problems of applying MIL-HDBK-217. top
Invited Paper, presented at the MANTECH Conference, Reno, NV
Bill Roesch and Richard Allen, April 1990, 1 page Abstract.
This abstract briefly discusses the problems of applying MIL-HDBK-217. top
Reliability Characterization of A Production GaAs MMIC Amplifier Methodology and Results
Presented at the GaAs REL Workshop, Nashville, TN
Michael F. Peters & Tony Rubalcava, November 1988, 2 pages.
This report details the methodology of GaAs MMIC reliability prediction and presents results from reliability tests. Included are descriptions of high frequency/high temperature fixturing, thermal analysis, step stress testing, accelerated lifetesting, ESD testing, radiation testing, package testing, and failure analysis. top
Presented at the GaAs REL Workshop, Nashville, TN
Michael F. Peters & Tony Rubalcava, November 1988, 2 pages.
This report details the methodology of GaAs MMIC reliability prediction and presents results from reliability tests. Included are descriptions of high frequency/high temperature fixturing, thermal analysis, step stress testing, accelerated lifetesting, ESD testing, radiation testing, package testing, and failure analysis. top
Thermo-Reliability Relationships of GaAs ICs
Presented at the GaAs IC Symposium, Nashville, TN
Bill Roesch, November 1988, 4 pages.
Thermal conductivity and failure mechanism activation energies are key parameters for determining reliable operation of GaAs ICs. The liquid crystal, diode drop, and infrared temperature measurement techniques are discussed.top
Presented at the GaAs IC Symposium, Nashville, TN
Bill Roesch, November 1988, 4 pages.
Thermal conductivity and failure mechanism activation energies are key parameters for determining reliable operation of GaAs ICs. The liquid crystal, diode drop, and infrared temperature measurement techniques are discussed.top
Lack Of Latent and Cumulative ESD Effects On MesFET-Based GaAs ICs
Presented at the EOS/ESD Symposium, Anaheim, CA
Tony Rubalcava & Bill Roesch, September 1988, 3 pages.
The purpose of this study is to demonstrate that GaAs IC structures have no latent or cumulative effects from ESD pulsing. These findings are of significance because GaAs devices can offer an advantage over MOSFET-based silicon ICs which are susceptible to latent damage resulting in degradation or field failures.top
Presented at the EOS/ESD Symposium, Anaheim, CA
Tony Rubalcava & Bill Roesch, September 1988, 3 pages.
The purpose of this study is to demonstrate that GaAs IC structures have no latent or cumulative effects from ESD pulsing. These findings are of significance because GaAs devices can offer an advantage over MOSFET-based silicon ICs which are susceptible to latent damage resulting in degradation or field failures.top
Proving GaAs Reliability With IC Element Testing
Presented at the MANTECH Conference, Nashville, TN
Bill Roesch & Doug Stunkard, November 1988, 5 pages.
This study identifies element testing used for investigating GaAs circuit reliability. Data on 4,241 ohmic contacts, thin film resistors, metallization interconnects, and MesFETs is presented in a condensed format. Correlation to IC data is made. top
Presented at the MANTECH Conference, Nashville, TN
Bill Roesch & Doug Stunkard, November 1988, 5 pages.
This study identifies element testing used for investigating GaAs circuit reliability. Data on 4,241 ohmic contacts, thin film resistors, metallization interconnects, and MesFETs is presented in a condensed format. Correlation to IC data is made. top
Depletion Mode GaAs IC Reliability
Presented at the GaAs IC Symposium, Portland, OR
Bill Roesch & Michael F. Peters, October 1987, 4 pages
This work presents results of digital MSI and MMIC reliability testing. Element test correlations are made. A comparison of IC and element median lives reveals a non-linear relationship between integration and reliability. General improvements of GaAs device reliability over time are indicated.top
Presented at the GaAs IC Symposium, Portland, OR
Bill Roesch & Michael F. Peters, October 1987, 4 pages
This work presents results of digital MSI and MMIC reliability testing. Element test correlations are made. A comparison of IC and element median lives reveals a non-linear relationship between integration and reliability. General improvements of GaAs device reliability over time are indicated.top
ElectroStatic Discharge Effects on GaAs ICs
Presented at the EOS/ESD Symposium, Las Vegas, NV
Anthony L. Rubalcava, Douglas Stunkard, and Bill Roesch, September 1986, 7 pages.
The ESD susceptibility of individual GaAs circuit elements and ICs is investigated in detail by this paper. The evaluation was made using a human body model ESD simulator which applied over 8,000 zaps to nearly 300 different GaAs structures. Eight conclusions are made.top
Presented at the EOS/ESD Symposium, Las Vegas, NV
Anthony L. Rubalcava, Douglas Stunkard, and Bill Roesch, September 1986, 7 pages.
The ESD susceptibility of individual GaAs circuit elements and ICs is investigated in detail by this paper. The evaluation was made using a human body model ESD simulator which applied over 8,000 zaps to nearly 300 different GaAs structures. Eight conclusions are made.top
Reliability Investigation of 1 Micron Depletion Mode IC MesFETs
Presented at the International Reliability Physics Symposium, Anaheim, CA
Dominic Ogbonnah & Arthur Fraser, April 1986, 6 pages.
This paper describes testing on MesFETs with details on analysis and determination of failure mechanisms. Early accelerated lifetesting is discussed.top
Presented at the International Reliability Physics Symposium, Anaheim, CA
Dominic Ogbonnah & Arthur Fraser, April 1986, 6 pages.
This paper describes testing on MesFETs with details on analysis and determination of failure mechanisms. Early accelerated lifetesting is discussed.top