Your Technical Connection: Base Station

• High Voltage, High Efficiency HBTs for 3G and 4G Amplifiers
  Microwave Journal, Sept 2007
  
  
• TriQuint Set to Deliver Record-Efficiency PAs
  Compound Semiconductor Online, December, 2008
  by Andy Extance; ©2008 Compound Semiconductor Online
  
  
• High Performance 28 V InGaP HBT Power Amplifiers
  Microwave Journal, Sept 2006, p 152
  
  
• The Safe Operating Area of GaAs-Based Heterojunction Bipolar Transistors
  http://ieeexplore.ieee.org/Xplore/login.jsp?url=/iel5/16/36109/01715609.pdf?tp=&arnumber=1715609&isnumber=36109
  IEEE Paper
  
  
• Reliability Study of InGaP/GaAs HBT for 28V Operation
  http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=4110016&isnumber=4109952
  IEEE paper
  
  
• A Metric for the Quantification of Memory Effects in Power Amplifiers
  http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=4020473&isnumber=4020429
  IEEE third party paper
  
  
• Averaging and Cancellation Effect of High-Order Nonlinearity of a Power Amplifier
  http://ieeexplore.ieee.org/Xplore/login.jsp?url=/iel5/8919/4392469/04358598.pdf?arnumber=4358598
  IEEE paper
  
  
• 28V High-Linearity and Rugged InGaP/GaAs Power HBT
  http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=4015051&isnumber=4014789
  IEEE paper
• Choosing The Proper RF Amplifier Based On System Requirements
  RF Globalnet and Wireless Design Magazine
  
  
• Understanding The Performance Of RF Amplifiers Used In Base Station Applications
  RF Globalnet and Wireless Design Magazine
  
  

UMTS-FDD

UMTS-FDD is designed to operate in the following paired bands:

Operating Band	Freq. Band	Common Name	UL Freq. UE> transmit (MHz>)	DL Freq. UE receive (MHz)	Channel Number (UARFCN) UL	Channel Number (UARFCN) DL	Region
I	2100	IMT	1920 - 1980	2110 - 2170	9612 - 9888	10562 - 10838	Europe, Asia, Africa, Oceania (Telstra, Optus, Vodafone AU, Three Mobile AU, Vodafone NZ), Brazil
II	1900	PCS	1850 - 1910	1930 - 1990	9262 - 9538 additional 12, 37, 62, 87, 112, 137, 162, 187, 212, 237, 262, 287	9662 - 9938 additional 412, 437, 462, 487, 512, 537, 562, 587, 612, 637, 662, 687	Americas (AT&T, Bell Mobility, Telcel, Telus,Rogers)
III	1800	DCS	1710 - 1785	1805 - 1880	937 - 1288	1162 - 1513	Europe, Asia, Oceania
IV	1700	AWS	1710 - 1755	2110 - 2155	1312 - 1513 additional 1662, 1687, 1712, 1737, 1762, 1787, 1812, 1837, 1862	1537 - 1738 additional 1887, 1912, 1937, 1962, 1987, 2012, 2037, 2062, 2087	USA (T-Mobile, Cincinnati Bell Wireless), Canada (WIND Mobile, Mobilicity,Videotron), Chile (VTR,Nextel)
V	850	CLR	824 - 849	869 - 894	4132 - 4233 additional 782, 787, 807, 812, 837, 862	4357 - 4458 additional 1007, 1012, 1032, 1037, 1062, 1087	Americas (AT&T, Bell Mobility, Telcel, Telus,Rogers), Oceania (Telstra, Telecom NZ)
VI	800		830 - 840	875 - 885	4162 - 4188 additional 812, 837	4387 - 4413 additional 1037, 1062	Japan (NTT DoCoMo)
VII	2600	IMT-E	2500 - 2570	2620 - 2690	2012 - 2338 additional 2362, 2387, 2412, 2437, 2462, 2487, 2512, 2537, 2562, 2587, 2612, 2637, 2662, 2687	2237 - 2563 additional 2587, 2612, 2637, 2662, 2687, 2712, 2737, 2762, 2787, 2812, 2837, 2862, 2887, 2912	Europe (future)
VIII	900	GSM	880 - 915	925 - 960	2712 - 2863	2937 - 3088	Europe[1], Asia, Oceania (Optus, Vodafone AU, Vodafone NZ), Dominican Republic (Orange), Venezuela (Digitel GSM)
IX	1700		1749.9 - 1784.9	1844.9 - 1879.9	8762 - 8912	9237 - 9387	Japan (E Mobile, NTT DoCoMo)
X	1700		1710 - 1770	2110 - 2170	2887 - 3163 additional 3187, 3212, 3237, 3262, 3287, 3312, 3337, 3362, 3387, 3412, 3437, 3462	3112 - 3388 additional 3412, 3437, 3462, 3487, 3512, 3537, 3562, 3587, 3612, 3637, 3662, 3687
XI	1500		1427.9 - 1447.9	1475.9 - 1495.9	3487 - 3562	3712 - 3787	Japan (Softbank)
XII	700	SMH	698 - 716	728 - 746	3612–3678 additional 3702, 3707, 3732, 3737, 3762, 3767	3837–3903 additional 3927, 3932, 3957, 3962, 3987, 3992	USA (future) (lower SMH blocks A/B/C)
XIII	700	SMH	777 - 787	746 - 756	3792–3818 additional 3842, 3867	4017–4043 additional 4067, 4092	USA (future) (upper SMH block C)
XIV	700	SMH	788 - 798	758 - 768	3892–3918 additional 3942, 3967	4117–4143 additional 4167, 4192	USA (future) (upper SMH block D)

Band	TS 25.101 DL to UL Freq. Separation (MHz)	TS 25.101 Center Freq. Range (MHz)	TS 25.101 UARFCN Equation	TS 25.101 UARFCN Range	Test Set "DL Channel" Range
I (IMT-2000)	190	2112.4 - 2167.6, increment = 0.2	5 * (center freq in MHz)	10562 - 10838	10562 - 10838
II(U.S. PCS)	80	1932.4 - 1987.6, increment = 0.2	5 * (center freq in MHz)	9662 - 9938	9662 - 9938
		1932.5 - 1987.5, increment = 5	5 * ((center freq in MHz) - 1850.1 MHz)	412, 437, 462, 487, 512, 537, 562, 587, 612, 637, 662, 687	412, 437, 462, 487, 512, 537, 562, 587, 612, 637, 662, 687
III(DCS/PCS)	95	1807.4 - 1877.6, increment = 0.2	5 * ((center freq in MHz) - 1575 MHz)	1162 - 1513	1162 - 1513
IV	400	2112.4 - 2152.6, increment = 0.2	5 * ((center freq in MHz) - 1805 MHz)	1537 - 1738	1537 - 1738 *
		2112.5 - 2152.5, increment = 5	5 * ((center freq in MHz) - 1735.1 MHz)	1887, 1912, 1937, 1962, 1987, 2012, 2037, 2062, 2087	1887, 1912, 1937, 1962, 1987, 2012, 2037, 2062, 2087 *
V(US Cellular)	45	871.4 - 891.6, increment = 0.2	5 * (center freq in MHz)	4357 - 4458	4357 - 4458 #
		871.5, 872.5, 876.5, 877.5, 882.5, 887.5	5* ((center freq in MHz) - 670.1 MHz)	1007, 1012, 1032, 1037, 1062, 1087	1007, 1012, 1032, 1037, 1062, 1087 #
VI(Japan 800)	45	877.4 - 882.6, increment = 0.2	5 * (center freq in MHz)	4387 - 4413	4387 - 4413 +
		877.5, 882.5	5 * ((center freq in MHz) - 670.1 MHz)	1037, 1062	1037, 1062 +
VII	120	2622.4 - 2687.6, increment = 0.2	5 * ((center freq in MHz) - 2175 MHz)	2237 - 2563	2237 - 2563
		2622.5 - 2687.5, increment = 5	5 * ((center freq in MHz) - 2105.1 MHz)	2587, 2612, 2637, 2662, 2687, 2712, 2737, 2762, 2787, 2812, 2837, 2862, 2887, 2912	2587, 2612, 2637, 2662, 2687, 2712, 2737, 2762, 2787, 2812, 2837, 2862, 2887, 2912
VIII	45	927.4 - 957.6, increment = 0.2	5 * ((center freq in MHz) - 340 MHz)	2937 - 3088	2937 - 3088
IX	95	1847.4 - 1877.4, increment = 0.2	5 * (center freq in MHz)	9237 - 9387	9237 - 9387 *
X	400	2112.4 - 2167.6, increment = 0.2	5 * ((center freq in MHz) - 1490 MHz)	3112 - 3388	3112 - 3388 *
		2112.5 - 2167.5, increment = 5	5 * ((center freq in MHz) - 1430.1 MHz)	3412, 3437, 3462, 3487, 3512, 3537, 3562, 3587, 3612, 3637, 3662, 3687	3412, 3437, 3462, 3487, 3512, 3537, 3562, 3587, 3612, 3637, 3662, 3687 *

Deployment in other frequency bands is not precluded.

UMTS-TDD

UMTS-TDD is designed to operate in the following bands:

Frequencies (MHz)	Channel Number (UARFCN)
1900 - 1920	9512 - 9588
2010 - 2025	10062 - 10113
1850 - 1910	9262 - 9538
1930 - 1990	9662 - 9938
1910 - 1930	9562 - 9638
2570 - 2620	12862 - 13088

Frequency bands deployment

In general, the various UMTS bands are deployed as follows:

• Band I (W-CDMA 2100) in Europe, India, Africa, Asia, Australia (all carriers' metropolitan networks), New Zealand (ITU Region 1) and Brazil (part of ITU Region 2)
• Band II (W-CDMA 1900) in North America and South America (ITU Region 2).
• Band IV (W-CDMA 1700 or Advanced Wireless Services) in the United States (T-Mobile USA) and Canada (WIND Mobile, Mobilicity and Vidéotron)
• Band V (W-CDMA 850) in Australia (Telstra NextG Network), Thailand (True move and DTAC), New Zealand (XT Mobile Network), Brazil, Canada, the USA, Guatemala, Costa Rica, Venezuela, other parts of South America, Israel[2], parts of Asia (ITU Region 2 and ITU Region 3), Poland (Sferia/Aero2 - hspa+ internet only)
• Band VIII (W-CDMA 900) in Europe, Asia, Australia (Optus and Vodafone regional/country 3G networks), New Zealand (ITU Region 1 and ITU Region 3), Thailand (Advanced Info Service) and Venezuela (Digitel GSM)

Multi-band

Today, most mobiles support multiple bands as used in different countries to facilitate roaming. These are typically referred to as multi-band phones. Dual-band phones can cover networks in pairs such as 2100/900 (bands I/VIII) in Europe, Middle East, Asia, Oceania or 1900/850MHz (bands II/V) in North and South America. With the recent release of AWS spectrum (band IV) in North America, the dual-band combo of 1700/2100 is also becoming popular there.

Roaming in Europe works well since all operators use the same bands. In the US this is not really the case[3]. European/Asian tri-band phones typically cover the 900, 1900 and 2100MHz bands giving good coverage in Europe and allowing very limited use in North America, while North American tri-band phones utilize 850, 1900 and 2100MHz for widespread North & South American service and good coverage for worldwide use thanks to the popularity of the 2100MHz spectrum. AWS versions of phones support normally 900/1700/2100 allowing for North American coverage on AWS enabled networks and roaming coverage on 2100MHz and on forthcoming 900MHz overlays in Europe and Asia.

Most UMTS phones also operate on GSM as well, supporting EDGE to ensure data coverage where HSPA still lacks coverage. Note however, that while a phone may have overlapping GSM & UMTS frequency support, being tri-band/quad-band in GSM/GPRS/EDGE does not imply the same support for UMTS, as was the case with many early 2100MHz-only UMTS devices.

Late 2010 there started appearing devices supporting majority of currently used UMTS bands. One of such devices is Samsung Galaxy Tab which uses Infineon PMB 5703[4] UMTS/EDGE RF transceiver chip. Currently shipping versions of Tab only allow to display the supported bands, but not change them. The USSD code used is *#2263#.

 

"UMTS frequency bands." Wikipedia, The Free Encyclopedia. 8 December 2010, 21:55.
< http://en.wikipedia.org/wiki/UMTS_frequency_bands >
Included here on 30 December 2010 

 

TriQuint offers a complete portfolio of RF power devices, small signal RFICs as well as RF and IF filter technology. Our technology portfolio includes the recent acquisition of WJ Communications product line-up, complementing the latest process advancements in GaAs, SAW and BAW.

• CDMA / 1X / 2000
• GSM / GPRS / EDGE
• WCDMA / TDSCDMA / LTE
• Standard Products

For an overview of these products, please see our

• Base Station Application Block Diagrams
• TriQuint Product Selection Guide

TriQuint^® Products in Modelithics™ Simulations

TriQuint Semiconductor, Inc. has teamed with industry leader Modelithics, Inc. to provide high-accuracy simulation models for a number of base station RF components. Access TriQuint models by clicking on the ‘MVP’ icon below. For more information about TriQuint products use the links on this page; click here to contact TriQuint product marketing. Please click the Modelithics logo to access that company’s website.

Get TriQuint Models – click here

TriQuint Product	Modelithics Datasheet
TGA2602-SM	HMT-TQT-TGA2602-SM_datasheet
TGA2960-SD	HMT-TQT-TGF2960-SD_datasheet
TGA2961-SD	HMT-TQT-TGF2961-SD_datasheet

TriPower™ HV-HBT High-Power Transistors Offer Breakthrough Efficiency

Network operators and the manufacturers who design and build their radio systems are faced with a dilemma: how to meet the ever-increasing demand for high-speed, high-capacity connectivity while lowering operational costs. The TriPower™ family of RFICs addresses these key concerns with breakthrough efficiency and linearity that supports the complex requirements of 3G/4G deployments. Operating in a systemic Doherty configuration, two TriQuint TG2H214120-FL 120 Watt devices can deliver over 60 Watts of average WCDMA power with 55% collector efficiency, the highest available. Our new TriPower devices are also easily linearized with conventional Digital Pre-Distortion (DPD) techniques, making them ideal for the RF designer. TriQuint's two new high-efficiency TriPower devices, [TG2H214120-FL (120W) and TG2H214220-FL (220W)] are the first in a series of products that will include more frequency bands and power levels. A growing TriPower family will expand the 'green' impact of this technology globally to different cellular systems.

Find out more about the benefits of TriPower's Gallium Arsenide (GaAs) high voltage hetero junction bipolar transistor (HV-HBT) technology and how TriQuint's devices deliver the highest efficiency in comparison with other base station high-power transistor technologies. In addition to higher efficiency, TriPower also enables tower-mounted remote radio head designs, effectively helping network operators increase capacity through larger amplifiers without a corresponding increase in size or weight. Higher-power amplifiers, in turn, deliver higher data rates to all users in the cell.

		TriPower™ – High Efficiency 3G/4G Innovation A product overview with specifications and power savings.
		HVHBT Doherty and Envelope Tracking PAs for High Efficiency WCDMA and WiMAX Base Station Applications By: Craig Steinbeiser, Thomas Landon, Gary Burgin, Oleh Krutko, Jeremy Haley, Preston Page, Don Kimball and Peter Asbeck (© 2009 TriQuint Semiconductor, Inc.; All rights reserved.)
		High Efficiency WCDMA Envelope Tracking Base Station Amplifier Implemented with GaAs HVHBTs By: Donald Kimball, Myoungbo Kwak, Paul Draxler, Jinseong Jeong, Chin Hsia, Craig Steinbeiser, Thomas Landon, Oleh Krutko, Larry Larson, Peter Asbeck (© 2008 IEEE; All rights reserved.)

Integration Drives Base Station Design Evolution

Whether a network operator is expanding coverage areas or initiating new service, system efficiency plays a critical role. Traditional gantry or monopole base stations are being replaced by smaller, high-efficiency plants that use remote radio head (RRH) technology. Remote radio heads can reduce real estate expenses, are more efficient, can be deployed more easily and offer inherent maintenance advantages. RRH components need to meet increasingly stringent size and efficiency goals in addition to established standards for reliable, virtually continuous operation unique to the base station environment.

TriQuint solutions enable the customer to spend less time / design energy on individual component issues, which frees them to focus on system performance.

Integration Levels Support BTS Evolution:

Contact TriQuint product marketing to discover more about the ways that TriQuint uses integration to simplify RF connectivity.

TriQuint and Scintera Offer Linearized PA Solution for 3G / 4G Small Cells

TriQuint and Scintera have developed a design-ready solution to power small cell 3G / 4G / LTE base stations.  This solution combines TriQuint Semiconductor off-the-shelf RF broadband amplifier ICs and advanced linearization techniques from Scintera to offer base station OEMs a means to address the data requirements of capacity-stressed WCDMA networks, as well as satisfy 4G / LTE data rate needs.The solution is designed to support all major global cellular bands including 700, 900, 2100 and 2600 MHz. Unlike traditional base stations which typically employ a 28V technology, the TriQuint / Scintera solution is the first to use a 12V power amplifier.

Figure 1: The TriQuint / Scintera solution utilizes a more cost-efficient 12V input supply while enabling fast-to-market RF strategies for small cell base stations.

This factor can reduce power consumption as well as save space within the housing by eliminating higher voltage converters.

This small cell solution combines Scintera’s SC1869 RF power amplifier linearizer with TriQuint’s broadband TQP7M9103 and AP561-F. Delivering 2 Watts (33dBm) of linear output power, the solution can support single or multiple carriers up to 20 MHz (total signal bandwidth) for all major cellular bands.  Network operators see small cell base stations as a cost-effective way to support 3G / 4G / LTE data rates. “This innovation simplifies RF connectivity by leveraging market-tested solutions and reducing power consumption while also using the same broadband RFICs across multiple bands,” said TriQuint Vice President, Brian P. Balut. 

TriQuint’s portion of the linearized transmitter system consists of the TQP7M9103 driver stage followed by AP561-F power amplifier.TriQuint’s TQP7M9103 and AP561-F provide a design-ready amplification solution with broadband coverage across all 3G / 4G frequency bands. Key specifications of the two devices are noted below.
TQP7M9103 • 400 to 4000 MHz • +29.5dBm P1dB • +45dBm output IP3 •  16.5dB gain @ 2140 MHz •  +5V single supply, 235mA current •  Internal RF overdrive protection •  Internal DC overvoltage protection •  On-chip ESD protection •  SOT-89 package		AP561-F • 700 to 2700 MHz •  +5V and +12V supply voltage •  2100 MHz Class AB high power match - 2W Paverage - 22% efficiency - 42dBm Psat - 14.8dB gain •  Easy to linearize with SC1869 - <-50dBc ACLR (4c WCDMA 7.8dB PAR) •  Internal bias and temperature compensation •  5x6mm DFN surface mount package
Scintera's SC1869 •  Up to 20 MHz instantaneous signal bandwidth •  PA average output:  500mW = PAout = 10W •  PA architectures:  Class A / AB The combination of TriQuint’s market-tested driver and power amplifier with Scintera’s linearization techniques offer RF designers a straight-forward, rapid development solution for satisfying the increasing capacity requirements of WCDMA and LTE networks. Scintera’s analog signal processing architecture effectively combines digital programmability with the simplicity, small size and low power consumption of analog circuit design. By repartitioning portions of the classic predistortion algorithm from the digital domain to the analog / RF domain, Scintera has delivered a predistortion linearization solution with very low power consumption, wide bandwidth performance, and a compact system footprint.		Figure 2: Scintera’s evaluation board shows the SC1869: 2.5x 2.5cm; no delay. Its SC1889: 2.5x3.6cm, provides printed delay. Both devices provide 4-layer design.
Figure 3: TriQuint’s TQM7M9103 and AP561-F are suitable for linearized systems and wide signal bandwidth. Scintera’s SC1869 solution provides greater than 17dB of correction in adjacent channel with 1111 4-carrier WCDMA 7.8dB PAR signal at a center frequency of 2.14 GHz. The solution is designed for 2W Paverage and supports all global cellular frequencies with up to 20 MHz of instantaneous signal bandwidth.		Contact Info TriQuint Semiconductor Email: info-networks@tqs.com Phone: +1.972.994.8200 Scintera Networks Roger Merel Email: roger@scintera.com Phone: +1.630.355.5751 View PDF version of this page