TQP770001
Power Amplifier MMIC
End of Life announced August 13, 2018 (PCN 18-0083).
Last Time Buy February 6, 2019.
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Key Features
- Amplifies Bluetooth® signal for improved range and robustness
- InGaP HBT technology
- Bluetooth® v2.0 class 1 systems
- High efficiency: 50% @ 21.5dBm
- EDR (Enhanced Data Rate) compliant
- Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy
- Will operate under Bluetooth® FSK, 8DPSK, and Pi/4-DQPSK modulations
- Optimized for 50 Ohm system
- Integrated bias controller with a power control (variable gain) function
- Small 12-pin QFN, 2 x 2 mm module
- Lead-free 260°C RoHS compliant
- Full ESD protection
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Qorvo's TQP770001 power amplifier (PA) is designed on Qorvo's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The power amplifier is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping and bias injection. Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The power amplifier is housed in a 2.0 x 2.0 mm 12-pin STSLP package with a grounded back paddle.
This power amplifier is designed to operate in Bluetooth® v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth® v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.
The Bluetooth® word mark and logos are registered trademarks owned by Bluetooth SIG, Inc. and any use of such marks by Qorvo, Inc. is under license. Other trademarks and trade names are those of their respective owners.
Typical Applications
- Amplifies Bluetooth® signal
Product Categories
| Package(mm) | 2.0 x 2.0 x 0.57 |
| RoHS | No |
| Lead Free | No |
| Halogen Free | No |
| ITAR Restricted | No |
| ECCN | 5A991.B |