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TriQuint is proud to announce the latest additions to our innovative RF portfolio. View our New Products page to discover ways to simplify your RF designs across mobile, network infrastructure and defense applications.
TriQuint's QUANTUM Tx™ family of highly integrated transmit modules reduce board space and enable a much smaller footprint for 2G / 3G / 4G mobile devices. Find out how these building blocks can make RF design easier and faster for 2G and entry-level 3G devices.
TriQuint's innovative TriAccess™ portfolio enables more efficient broadband video, voice and data services. TriQuint amplifiers and filters lower power consumption with improved performance. TriQuint enables all major 75 ohm RF systems in headend, infrastructure, MDU and CPE applications.
Consumers have come to expect Wi-Fi connectivity in their smartphones, tablets and other mobile devices. You'll find TriQuint's TriConnect® Wi-Fi RF modules in many of the world's most sought-after products.
TRITIUM™ is a family of highly integrated modules designed for use in 3G mobile phones, data cards and USB modems. Optimize your 3G CDMA / WCDMA / HSUPA applications and gain maximum design flexibility.
TriQuint's highly integrated TRIUMF™ MMPAs are one more proven way that TriQuint engineers are delivering innovative solutions for the most complex mobile design challenges for cutting-edge smartphones. Let us help you simplify your 2G / 3G / 4G design and enhance system performance while speeding time to market.
Part # TGL6425-SCC
Last Time Buy Please contact TriQuint Sales for details.
The TriQuint TGL6425-SCC is a GaAs MMIC 5-bit FET attenuator which operates from 0.5 to 18 GHz. The attenuation step is 0.5 dB and is controlled by 10 input lines. Control bias voltages are 0 V and -5 V. The input and output return loss is typically 13 dB.
This unique absorptive design combines both "T" and "PI" configurations to produce an extremely small size and low insertion loss attenuator. The small size and reliability advantage of a monolithic attenuator over a hybrid design make this device attractive for use in electronic warfare (EW), radar, telecommunications and navigation systems for level set, modulation and switching functions.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment method as well as the thermocompression and thermosonic wire bonding processes. Ground is provided to the circuitry through vias to the backside metallization.