Qorvo's TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes.
Frequency Min(MHz) | DC |
Frequency Max(MHz) | 10,500 |
Gain(dB) | 9.5 |
Psat(dBm) | 37 |
PAE(%) | 52 |
Vd(V) | 8.5 |
Idq(mA) | 768 |
Package Type | Die |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |