Use Our ProductsTGF4230-SCC 
1.2 mm HFET
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.
| Frequency (GHz) | Gain (dB) | Power (dBm) | NF (dB) | PAE (%) | Vd (V) | IQ (mA) |
|---|---|---|---|---|---|---|
| DC to 12 | 10 | 28.5 | 55 | 8 | 96 |
Product Features
- Nominal Pout of 28.5 dBm at 8.5 GHz
- Nominal gain of 10.0 dB at 8.5 GHz
- Nominal PAE of 55 % at 8.5 GHz
- 1200 um HFET
- Bias at 8 V, 96 mA
- Dimensions: 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)
Typical Applications
- Cellular Base Stations
- High Dynamic Range LNAs
- Military
- Space
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Additional Information
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