TGF2021-04-SD
DC - 4 GHz Discrete Power pHEMT
End of Life announced May 5, 2017 (PCN 17-0070).
Last Time Buy Nov 18, 2017.
Contact your local sales representative for assistance.
Please use TQP3M9007 or TQP3M9035 for new designs.
Key Features
- Frequency range: DC to 4 GHz
- Package dimensions: 4.5 x 4 x 1.5 mm
- Nominal 900 MHz low noise application board performance:
- OTOI: 39.5 dBm
- Noise figure: 0.6 dB
- Gain: 16 dB
- P1dB: 26.5 dBm
- Input return loss: -8 dB
- Output return loss: -18 dB
- Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (typical)
Qorvo's TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT-89 surface mount package.
The device's ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 16 dB gain, 0.6 dB noise figure and 39.5 dBm output IP3. The combination of high gain, low noise and excellent linearity makes this an ideal component for use in a 3G or 4G receive chain.
The part is lead-free and RoHS compliant. Evaluation boards at 900 MHz are available upon request.
Typical Applications
- General Purpose
- Tower Mounted Amplifiers
- Transceivers
Product Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 16 |
| OP1dB(dBm) | 26.5 |
| NF(dB) | 0.6 |
| Vd(V) | 5 |
| Idq(mA) | 150 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |