Use Our ProductsTGA4509 
30 GHz High Power Amplifier
| Frequency (GHz) | Power (dBm) | Gain (dB) | NF (dB) | PAE (%) | Voltage (V) | IQ (mA) |
|---|---|---|---|---|---|---|
| 27 to 31 | 30 | 22 | 6 | 420 |
Product Features
- 22 dB nominal gain @ 30 GHz
- 30 dBm nominal Pout @ P1dB
- 25% PAE @ P1dB
- -10 dB nominal return loss
- Built-in power detector
- 0.25-um mmW pHEMT 3MI
- Bias conditions: Vd = 4 - 6 V, Idq = 420 mA
- Chip dimensions: 2.44 x 1.15 x 0.1 mm (0.096 x 0.045 x 0.004 in)
Typical Applications
- LMDS
- Point-to-Multipoint Radio
- Point-to-Point Radio
- Satellite Ground Terminals
Documents & Files
Additional Information
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