TGA2573-2-TS
2 - 18 GHz, 10 Watt GaN Amplifier on Carrier
End of Life announced May 29, 2020 (PCN 20-0067).
Last Time Buy: December 9, 2020
Recommended replacements for new designs: TGA2962, QPA2962, QPA2966D
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2 to 18 GHz
- PSAT: 40 dBm at VD = 30 V
- PAE: 20% typical
- Small signal gain: 10 dB
- Return loss: 15 dB
- Bias: VD = 30 V, IDQ = 500 mA, VG = -2.3 V typical
- Technology: 0.25-um GaN on SiC
- Dimensions: 5.66 x 2.67 x 0.5 mm
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Qorvo's TGA2573-2-TS is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
The TGA2573-2-TS is a 4-mil thick GaN die mounted on a 15 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2-TS is ideally suited to support both commercial and defense related applications.
The TGA2573-2-TS is 100% DC and RF tested onwafer to ensure compliance to performance specifications.
Lead-free and RoHS compliant.
Typical Applications
- Communication Systems
- Electronic Countermeasures (ECM)
- Electronic Warfare
- Military Radar
- Test Equipment
- Multi-Band VSAT
Product Categories
Application Categories
| Frequency Min(GHz) | 2 |
| Frequency Max(GHz) | 18 |
| Pout(dBm) | 40 |
| Psat(dBm) | 40 |
| Gain(dB) | 10 |
| PAE(%) | 20 |
| Voltage(V) | 30 |
| Current(mA) | 500 |
| Package Type | Die |
| Package(mm) | 5.66 x 2.67 x 0.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | Yes |
| ECCN | 3A611.X |
This product appears in the following application block diagrams: