| Frequency (GHz) | Power (dBm) | Gain (dB) | NF (dB) | PAE (%) | Voltage (V) | IQ (mA) |
|---|---|---|---|---|---|---|
| 13 to 17 | 33 | 32 | 7 | 680 |
Product Features
- 33 dBm midband Pout
- 32 dB nominal gain
- 10 dB typical return loss
- Built-in directional power detector with reference
- 0. 50 um pHEMT technology
- Bias conditions: 7 V, 680 mA
- Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)
Documents & Files
Additional Information
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