QPD2793
2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor
Discontinued >
End of Life announced December 13, 2021 (PCN 21-0252).
Last Time Buy: December 4, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2.62-2.69 GHz, Band 7
- Drain voltage: 48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 75%
- NI-400 ceramic package
Qorvo's QPD2793 is a discrete GaN on SiC HEMT which operates from 2.62-2.69 GHz. The device is a single stage matched power amplifier transistor.
The QPD2793 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2793 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant.
Typical Applications
- Active Antennas
- Band 7
- Macro Cell Base Station
- Wireless Communications
Product Categories
| Frequency Min(MHz) | 2,620 |
| Frequency Max(MHz) | 2,690 |
| Gain(dB) | 23 |
| Psat(dBm) | 53 |
| PAE(%) | 75 |
| Vd(V) | 48 |
| Idq(mA) | 360 |
| Package Type | NI-400 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: