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GaN Products

GaN Innovation Brochure
Integrated Assemblies / Packaging Services

Gallium Nitride Innovation from TriQuint

TriQuint continues its high-power RF semiconductor leadership with a wide-ranging portfolio of gallium nitride (GaN) products, complemented by our proven high frequency 0.25-micron GaN on SiC foundry services. TriQuint is committed to providing world-class GaN product innovation from DC to 18 GHz including discrete transistors, MMICs and packaged solutions, supported by our unique ability to integrate and package single and multiple die in secure, US facilities. Demand for GaN technology is growing worldwide – the solution is RF innovation from TriQuint Semiconductor.

GaN Delivers Unmatched HPA Performance

TriQuint gallium nitride foundry
  • High power density
  • Excellent gain and efficiency
  • Robust operation and long pulse capability
  • High operating voltage for reduced system current

GaN Satisfies High Power Switch Requirements

  • High breakdown and current enable high voltage and high power switches
  • 40W through 6GHz; 20W to 12GHz and 10W to 18GHz available today
Amplifiers
Part Description Frequency (GHz) Power (dBm) Gain (dB) NF (dB) PAE (%) Voltage (V) IQ (mA)
TGA2540-FL 30 - 3000 MHz GaN Power Amplifier 0.03 to 3 39.5 19.5 > 40 28 360
TGA2572 GaN 20W Ku Band Power Amplifier 14 to 16 43 23 30 35 2,000
TGA2572-FL 20 Watt Ku Band GaN Power Amplifier 14 to 16 43 23 30 30 2,000
TGA2573-TS 2 - 18 GHz, 10 Watt GaN Amplifier on Carrier 2 to 18 40 9 25 30 500
TGA2576-FL 2.5 - 6 GHz GaN HEMT Power Amplifier 2.5 to 6 45.5 26 35% 30 1,550
TGA2579-FL 25 Watt Ku-Band GaN Power Amplifier 13.75 to 15.35 44 32 - 30 25 1,000

Discrete Devices
Part Description Frequency (GHz) Gain (dB) Power (dBm) NF (dB) PAE (%) Vd (V) IQ (mA)
T1G4003532-FL 35W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 17 45.7 - 54 32 150
T1G4003532-FS 35W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 17 45.7 - 54 32 150
T1G4005528-FS 55 W, 28 V, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 15 47.2 > 50 28 200
T1G6000528-Q3 7 W, 28 V, DC - 6 GHz, GaN RF Power Transistor DC to 6 15.5 39.5 > 50 28 50
T1G6001528-Q3 18 W, 28 V, DC - 6 GHz, GaN RF Power Transistor DC to 6 15 42.5 > 50 28 50
T1G6003028-FL 30W, 28V, DC-6GHz GaN RF Power Transistor DC to 6 14 45 50 28 200
T1G6003028-FS 30W, 28V, DC-6GHz GaN RF Power Transistor DC to 6 14 45 50 28 200
T2G4005528-FS 55 W, 28 V, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 15 47.2 > 50 28 200
T2G6000528-Q3 7 W, 28 V, DC - 6 GHz, GaN RF Power Transistor DC to 6 15.5 39.5 50 28 50
T2G6003028-FL 30W, 28V, DC-6GHz GaN RF Power Transistor DC to 6 14 45 50 28 200
T2G6003028-FS 30W, 28V, DC-6GHz GaN RF Power Transistor DC to 6 14 45 50 28 200
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 38 55 28 to 40 125
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 41 55 28 to 40 250
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 44 55 28 to 40 500
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 47 55 28 to 40 1,000
TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 38 55 28 to 40 125
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 41 55 28 to 40 250
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 44 55 28 to 40 500
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 47 55 28 to 40 1,000
TGF2023-2-20 100 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 50 55 28 to 40 2,000
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT DC to 18 15 > 50 55 28 to 40 2,000

Switches
Part Description Frequency (GHz) Insertion Loss (dB) ISO (dB) P1dB (dBm) Voltage (V) IQ (mA)
TGS2351 DC - 6 GHz High Power GaN SPDT Switch DC to 6 0.8 -40 > 46 0, -40 < 1
TGS2351-SM DC - 6 GHz High Power GaN SPDT Switch DC to 6 < 1 -40 46 0, -40 < 1
TGS2352 DC - 12 GHz High Power GaN SPDT Switch DC to 12 < 1 -35 > 43 0, -40 < 1
TGS2353 DC - 18 GHz High Power GaN SPDT Switch DC to 18 1.5 -30 > 40 0, -40 < 1