GaAs MESFETs

TriQuint offers customers design flexibility by offering discrete transistors using high-reliability 0.5 µm MESFET processes, with many applications in network infrastructure, defense, testing and general purposes. Our discrete MESFETs allow customers to optimize designs for gain, gain flatness, return loss, noise figure and/or linearity performance. Designers can also configure biasing control; the devices offer optimal Class A performance at 100% Idss.

Key Benefits

  • Design flexibility
  • Reliable and robust
  • Low noise figure

Applications

  • Base station
  • CATV / FTTH
  • Point-to-point radio
  • Defense communications
  • Receiver and transmitter applications
  • Test instrumentation

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Discrete Transistors

Parametric Search

NF
PAE
    GHz  dB  dBm  dBm  dB  mA   
CLY2 GaAs FET DC to 3 14.5 23.5 0.79 3 180 MW6
CLY5 GaAs FET 0.4 to 2.5 11 27 1.7 3 350 MW6