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Power

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PowerBand™ RF Transistors
Part Description Technology Band Operating Voltage (V) P1dB (Watts) Gain (dB) Efficiency (%) Wide-band EVA Board
T1P2701012-SP 10 W, 12 V, 500 MHz - 3 GHz pHEMT RF Power Transistor pHEMT 500MHz - 2.7GHz 12 10 10 50 T1P2701012-SP
T1P3002028-SP 20 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor pHEMT 500MHz - 2.5GHz 28 20 10 50 T1P3002028-SP
T1G6003028-SP 25W, 28V, 20 MHz - 6 GHz GaN Discrete RF Transistor GaN 20MHz - 6.0GHz 28 25 8 50 T1G6003028-SP
T1L2003028-SP 30 W, 28 V, 500 MHz - 2 GHz LDMOS RF Power Transistor LDMOS 500MHz - 2.0GHz 28 30 10 60 T1L2003028-SP
T1P3003028-SP 30 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor pHEMT 500MHz - 2.0GHz 28 30 10 50 T1P3003028-SP
T1P3005028-SP 50 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor pHEMT 500MHz - 2.0GHz 28 50 10 50 T1P3005028-SP

Amplifiers
Part Description Freq (GHz) Power (dBm) Gain (dB) NF/PAE +V IQ (mA)
TGA2921-SG 4 Watt 802.11a Packaged Amplifier 4.9 to 6 36 11 - 8 800
TGA2922-SG 2 Watt 802.11a Packaged Amplifier 4.9 to 6 34 11 - 8 480
TGA2923-SG 10 Watt MMDS Packaged Amplifier 3.5 40 9 - 8 1200
TGA2924-SG 10 Watt MMDS Packaged Amplifier 1 - 4 40 12 - 8 1200
TGA2925-SG 5.6 Watt 3.5 GHz Packaged HPA 2 - 4 37.5 12 - 8 750

Discrete Devices
Part Description Freq (GHz) Gain (dB) Power (dBm) NF/PAE Vd (V) IQ (mA)
TGF2021-01 X-band Discrete Power pHEMT DC - 12 11 > 30 59% 8 - 12 75 - 125
TGF2021-02 X-band Discrete Power pHEMT DC - 12 11 > 33 59% 8 - 12 150 - 250
TGF2021-04 X-band Discrete Power pHEMT DC - 12 11 > 36 59% 8 - 12 300 - 500
TGF2021-04-SG pHEMT WIdeband RF Transistor 20 MHz - 4GHz 12V 4W      
TGF2021-08 X-band Discrete Power pHEMT DC - 12 11 > 39 59% 8 - 12 600 - 1000
TGF2021-08-SG pHEMT Wideband RF Transistor 20 MHz - 4GHz 12V 7W      
TGF2021-12 X-band Discrete Power pHEMT DC - 12 11 > 42 58% 8 - 12 900 - 1500
TGF2022-06 Ku-band Discrete Power pHEMT DC - 20 13 > 28 58% 8 - 12 45 - 75
TGF2022-12 Ku-band Discrete Power pHEMT DC - 20 13 > 31 58% 8 - 12 90 - 150
TGF2022-24 Ku-band Discrete Power pHEMT DC - 20 13 > 34 58% 8 - 12 180 - 300
TGF2022-48 Ku-band Discrete Power pHEMT DC - 20 13 > 37 58% 8 - 12 360 - 600
TGF2022-60 Ku-band Discrete Power pHEMT DC - 20 12 > 38 57% 8 - 12 448 - 752
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >38 55% 28 - 40 125
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >41 55% 28 - 40 250
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >44 55% 28 - 40 500
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >47 55% 28 - 40 1000
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >50 55% 28 - 40 2000
TGF2960-SD 0.5 W DC-5 GHz Packaged HFET DC-5 19 27 4/60% 8 100
TGF2961-SD 1 W DC-4GHz Packaged HFET DC-4 18 31 4/60% 8 200
TGF4112 12mm HFET DC - 8.0 14@2GHz 37 55% 8 750
TGF4118 18mm HFET DC - 6.0 13.5@2GHz 38.5 53% 8 1690
TGF4124 24mm HFET DC - 4.0 13@2GHz 40 51% 8 2170
TGF4230-SCC 1.2 mm HFET DC - 12.0 10 28.5 55% 8 96
TGF4240-SCC 2.4mm HFET DC - 12.0 10 31.5 56% 8 192
TGF4250-SCC 4.8 mm HFET DC - 10.5 8.5 34 53% 8 384
TGF4260-SCC 9.6mm HFET DC - 10.5 9.5 37 52% 8.5 768

Discrete Transistors
Part Description Freq (GHz) Gain (dB) IIP3 (dBm) NF/PAE Vd (V) IQ (mA)
CLY2 High Power Packaged GaAs FET; +23.5 dBm to 3 14.5   55% 3  
CLY5 High Power Packaged GaAs FET; +26.5 dBm to 2.5 9.5   55% 3