• Use our products

• Find a product

  • Search
  • + Browse
    • + Amplifiers
      • Driver Amplifiers
      • Gain Block Amplifiers
      • High Power Amplifiers
      • Low Noise Amplifiers
      • Power Amplifiers
      • Power Amplifier Modules
      • VGA
      • Wideband Amplifiers
    • + Control Products
      • Attenuators
      • Limiters
      • Oscillators
      • Phase Shifters
      • Switches
    • + Discrete Transistors (FETs)
      • Low Noise
      • Power
      • LDMOS Avionics/Radar
      • LDMOS Telecom
      • GaAs MESFETs
      • GaAs HFETs
    • + Filters & Duplexers
      • Duplexers
      • + IF Filters
        • Standard 70 MHz Filter Family
        • Standard 140 MHz Filter Family
        • Other IF
      • RF Filters
    • + Frequency Converters
      • Doublers
      • Mixers
      • Multifunction
      • Receivers
      • Triplers
    • + Integrated Products
      • Switch Modules
    • + Optical Components
      • Modulator Drivers
      • Physical Layer
      • TIAs
    • + Passives
      • Attenuators
      • Couplers
      • GaAs Passives
    • RFID Products
    • + Standard Products
      • GaAs MMICs
      • Standard 70 MHz Filter Family
      • Standard 140 MHz Filter Family
  • App. Block Diagrams
  • Product Guides
  • New Products

• Markets

  • Mobile Devices
  • Defense & Aerospace
  • Networks
    • Automotive
    • Base Station
    • Bluetooth
    • BWA/WiMAX
    • Cable
    • GPS
    • Optical
    • PTP Radio
    • VSAT
    • WLAN

• Technical Library

• Why TriQuint?

  • Manufacturing Facilities
  • Awards
  • Quality
  • Environment, Health & Safety

PowerBand™

TriQuint Semiconductor has created a revolutionary new wideband, high power discrete RF transistor family for broadband applications including radar, signal jammers and wireless communications. TriQuint's new PowerBand™* device family, utilizing proprietary design and process techniques, delivers high power performance across an exceptionally wide bandwidth while maintaining very high efficiency. PowerBand™ technology now leverages the inherent advantages of GaAs, GaN and Silicon LDMOS processes.

For more technical details on PowerBand™, please see our PowerBand™ Tech Connect page. Answers to commonly asked questions are found in the PowerBand™ FAQ .

For an overview of our Defense and Aerospace capabilities, please browse our brochure. For an overview of our products, review our latest Product Selection Guide, or our Oscillator Product Brochure.

PowerBand™ RF Transistors

Part	Description	Technology	Band	Operating Voltage (V)	P1dB (Watts)	Gain (dB)	Efficiency (%)	Wide-band EVA Board
T1P2701012-SP	10 W, 12 V, 500 MHz - 3 GHz pHEMT RF Power Transistor	pHEMT	500MHz - 2.7GHz	12	10	10	50	T1P2701012-SP
T1P3002028-SP	20 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor	pHEMT	500MHz - 2.5GHz	28	20	10	50	T1P3002028-SP
T1G6003028-SP	25 W, 28 V, 20 MHz - 6 GHz GaN Discrete RF Transistor	GaN	20MHz - 6.0GHz	28	25	8	50	T1G6003028-SP
T1L2003028-SP	30 W, 28 V, 500 MHz - 2 GHz LDMOS RF Power Transistor	LDMOS	500MHz - 2.0GHz	28	30	10	60	T1L2003028-SP
T1P3003028-SP	30 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor	pHEMT	500MHz - 2.0GHz	28	30	10	50	T1P3003028-SP
T1P3005028-SP	50 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor	pHEMT	500MHz - 2.0GHz	28	50	10	50	T1P3005028-SP