High-Power / High-Performance Gallium Nitride
TriQuint is an innovative leader in gallium nitride (GaN) research, development, foundry services and product solutions. We began exploring gallium nitride's potential in 1999 and released our first GaN on silicon carbide (SiC) foundry process in 2008. TriQuint recently announced record-setting GaN circuit reliability with its TQGaN25 Generation II process that paves the way for more robust performance, lower maintenance and longer operational lifetimes. TriQuint is also accredited by the DoD (DMEA) as a Microelectronics Trusted Source (Category 1A) for its foundry, post-processing, packaging/assembly and test services.
TriQuint's gallium nitride technology offers inherent advantages including greater power densities, ruggedness, wideband performance, power added efficiency (PAE) and ESD resistance. GaN technology is very well suited for a wide range of applications that include communications, network infrastructure, and defense / aerospace such as phased array radar, counter-IED (C-IED), VSAT and similar systems.
R & D Leadership
TriQuint's gallium nitride R & D expertise and leadership in a wide range of high-power, high-frequency processes led DARPA to choose TriQuint for multiple contracts, most recently for its Near Junction Thermal Transport (NJTT), Microscale Power Conversion (MPC) and 'NEXT' programs. TriQuint also supports the Defense Production Act Title III GaN program for continued manufacturing enhancements. Other advanced TriQuint GaN research and development programs are funded by the Tri-Services laboratories that include U.S. Air Force, Army and Navy divisions. TriQuint researchers are pioneering new ultra-fast, high-power DC-DC switches, integrated high-efficiency amplifiers and complex high dynamic range mixed-signal devices.
Complete Solutions & Services
Our comprehensive foundry services are complemented by TriQuint's innovative GaN product solutions including full MMIC amplifiers, die-level FETs, switches and wideband transistors from DC-18 GHz. TriQuint also provides state-of-the-art packaging and integrated assembly services for single die and multi-chip modules through our secure, in-house facility.
TriQuint's Gallium Nitride foundry services team has engaged customers since 2004. Our experience as a lead GaN researcher for multiple government contracts helps speed programs from project inception through wafer delivery. TriQuint's 0.25um GaN on SiC process coupled with our 3MI (3-Metal Interconnect) passives offer not just a FET foundry but a full MMIC solution. Our development of processes created to extend device longevity and perfect manufacturing is an assurance that your circuit design is being handled by one of the world's most experienced GaN foundry providers, demonstrating that our ability to handle programs large and small remains unequalled. TriQuint's outstanding customer service, state-of-the-art design kits and accreditation by the Defense Department as a Category 1A 'Microelectronics Trusted Source' covers all of the following services: foundry, post-processing, packaging/assembly and test. This level of accreditation is further assurance that your devices will be produced by the industry's most trusted high-power/high-frequency foundry experts.Related Links
Foundry Customer Log-in
GaN Process Data Sheet
GaN Tech Resources
As a leading Gallium Nitride researcher and manufacturer, TriQuint experts have authored a number of recent articles on GaN process development, device longevity and manufacturing techniques. This list is updated regularly, so check back for new titles.
"Near-Junction Thermal Management in High-Power GaN HEMTs"
Dumka et al, 2012 GOMACTech presentation.
"Backside Via Process of GaN Device Fabrication"
Ruan et al, 2012 ManTech Conference.
"State-of-the-Art E/D GaN Technology Based on an InAIN / AIN / GaN Heterostructure"
Saunier et al, 2011 GOMACTech presentation.
"Wideband Power Amplifier MMICs Utilizing GaN on SiC"
Eli Reese, Donald Allen, Cathy Lee, and Tuong Nguyen, 2010, MTT presentation.
"Wideband High Power GaN on SiC SPDT Switch MMICs"
Charles F. Campbell and Deep C. Dumka, 2010, MTT presentation.
"Gallium Nitride Wideband and S-band MMIC Development"
Lee et al. 2009 GOMACTech presentation.
"S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process"
Campbell et al. 2009 GOMACTech presentation.
"SiC Substrate Via Etch Process Optimization"
Ruan et al. 2009 CS MANTECH presentation.
"A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology"
Campbell et al. 2008 CSIC Symposium presentation.
"Gallium Nitride HEMT Development for Decade-Wide Amplifier Applications"
Balistreri et al. 2008 GOMACTech presentation.
"Impact of Electrical Degradation on Trapping Characteristics of GaN High Electron Mobility Transistors"
Joh and del Alamo. 2008 International Electron Device Meeting presentation.
"AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications"
Kao el al. 2007 MTT-S Symposium presentation.
"Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors"
Joh and del Alamo. 2007 International Electron Device Meeting presentation.
"Uniformity Correlation of AlGaN/GaN HEMTs grown on 3-inch SiC Substrates"
Lee et al. 2007 CS MANTECH presentation
"Effects of AlGaN/GaN HEMT structure on RF Reliability"
Lee et al. 2005 Electronic Letters (pp 155-157).
"High-Temperature Power Performance of X-Band Recessed-Gate AlGaN/GaN HEMTs"
Lee et al. 2005 CSIC Symposium presentation.
"Effects of RF Stress on Power and Pulsed IV Characteristics of AlGaN/GaN HEMTs with Field-Plate Gates"
Lee et al. 2004 Electronic Letters (pp 1547-1548).
"AlGaN - GaN HEMTs on SiC with CW Power Performance of >4 W/mm and 23% PAE at 35 GHz"
Lee et al. 2003 Electron Device Letters (pp 616-618).
The performance advantages of Gallium Nitride technology make it ideal for applications that can benefit most from higher power density, greater PAE, ruggedness, wideband performance and/or superior ESD resistance - the characteristics that distinguish GaN from other semiconductor technologies. At the same time, various other applications can be well-served by mature, incumbent Gallium Arsenide high-performance processes. As a GaAs and GaN leader, let TriQuint help you choose the right process for your application.
Choosing GaN Q&A
- My application requires 1W output power in the 3-6GHz range. Is GaN the right choice for me? GaN was developed for high power amplifiers through 18 GHz. For 6V, 9V or 12V applications up to 1.5W output power, the most cost effective choice could be one of our 100mm GaAs pHEMT processes. TriQuint also offers a range of wideband GaN transistors that offer excellent power handling and efficiency from DC to 6 GHz.
- I'm looking for highly linear performance in a wireless base station application. I understand GaN is generally more linear than GaAs. Is that true? Generally speaking, yes. For example: Comparing 0.25um GaN with the same FET periphery as 0.25um pHEMT, the GaN devices will have a higher intercept point than GaAs - However, tell TriQuint about how you define 'linearity' for your application. What are the load conditions and what is the quiescent current? We can point you toward the best value process.
- I've got to have better PAE than the 30% we've typically achieved with LDMOS RF transistors. I understand GaN PAE is exceptional. What's the best choice? GaN PAE is better than silicon-based processes across wide bandwidths and even superior to GaAs with PAE typically at 50% or more. For many applications, our GaN standard transistors deliver exceptional performance with bandwidth as great as DC-6 GHz. GaN transistors can frequently reduce amplifier sizes by 50%. Any semiconductor technology will present the designer with choices between efficiency, bandwidth and other characteristics. Thanks to its inherent qualities and pioneering TriQuint development programs, our GaN processes and products offer more benefits including greater bandwidth, efficiency, ruggedness and power density. TriQuint Foundry Services and Product Solutions teams can offer guidance about the right process or device to fit your needs. The more you know about your exact performance requirements the faster we can get you started.
- Is TriQuint's process designed to be competitive with lower-frequency, higher-power GaN? TriQuint seeks to serve the high-power, high-frequency GaN market since the applications that can benefit most from GaN's inherent performance advantages are typically both high-power and high-frequency. We offer excellent lower-power, lower-frequency alternatives, including the industry's largest selection of GaAs processes and standard products.