High-Power / High-Performance Gallium Nitride

GaN Foundry

TriQuint’s Gallium Nitride foundry services team has engaged customers since 2004. Our experience as a lead GaN researcher helps speed programs from project inception through wafer delivery. TriQuint’s 0.25µm GaN on SiC process coupled with our 3MI (3-Metal Interconnect) passives offer not just a FET foundry but a full MMIC solution. Our development of processes created to extend device longevity and perfect manufacturing is an assurance that your circuit design is being handled by one of the world’s most experienced GaN foundry providers. TriQuint has also been recognized by Strategy Analytics as the world’s largest GaAs commercial foundry¹, demonstrating that our ability to handle programs large and small remains unequalled. TriQuint’s outstanding customer service, state-of-the-art design kits and accreditation as a Defense Department ‘Trusted Foundry’ are further assurances your circuit will be produced by the industry’s leading high-power/high-frequency foundry experts.

Related Links
Foundry
Foundry Customer Log-in
Defense/Aerospace
GaN Process Data Sheet

GaN Tech Resources

As a leading Gallium Nitride researcher and manufacturer, TriQuint experts have authored a number of recent articles on GaN process development, device longevity and manufacturing techniques. This list is updated regularly, so check back for new titles.

“Gallium Nitride Wideband and S-band MMIC Development,” Lee et al. 2009 GOMACTech presentation.

“Physical Degradation of GaN HEMT Devices Under High Drain Bias Reliability Testing,” University of Texas at Dallas/TriQuint. 2009 Microelectronics Reliability.

“S-Band High Efficiency Class-E Power Amplifier MMICs Manufactured with a Production Released GaN on SiC Process”, Campbell et al. 2009 GOMACTech presentation.

“SiC Substrate Via Etch Process Optimization,” Ruan et al. 2009 CS MANTECH presentation.

“A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology,” Campbell et al. 2008 CSIC Symposium presentation.

“Gallium Nitride HEMT Development for Decade-Wide Amplifier Applications,” Balistreri et al. 2008 GOMACTech presentation.

“Impact of Electrical Degradation on Trapping Characteristics of GaN High Electron Mobility Transistors,” Joh and del Alamo. 2008 International Electron Device Meeting presentation.

"TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs," by Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier and Tony Balistreri; Seong-Yong Park, Taehun Lee, J. Wang, and Moon J. Kim; Jungwoo Joh, and Jesus A. del Alamo. August 2008 Electron Device Letters.

"X-Band GaN Reliability," by Jose L Jimenez and U. Chowdhury. May 2008 (Invited) International Reliability Physics Symposium presentation.

“AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications,” Kao el al. 2007 MTT-S Symposium presentation.

“Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors,” Joh and del Alamo. 2007 International Electron Device Meeting presentation.

“Progress in GaN Performance and Reliability,” Saunier et al. 2007 Device Research Conference presentation.

“Uniformity Correlation of AlGaN/GaN HEMTs grown on 3-inch SiC Substrates,” Lee et al. 2007 CS MANTECH presentation

“Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors,” Joh and del Alamo. 2006 International Electron Device Meeting presentation.

“Effects of AlGaN/GaN HEMT structure on RF Reliability,” Lee et al. 2005 Electronic Letters (pp 155-157).

“High-Temperature Power Performance of X-Band Recessed-Gate AlGaN/GaN HEMTs,” Lee et al. 2005 CSIC Symposium presentation.

“Effects of RF Stress on Power and Pulsed IV Characteristics of AlGaN/GaN HEMTs with Field-Plate Gates,” Lee et al. 2004 Electronic Letters (pp 1547-1548).

“AlGaN–GaN HEMTs on SiC with CW Power Performance of >4 W/mm and 23% PAE at 35 GHz,” Lee et al. 2003 Electron Device Letters (pp 616-618).

Related Links
Defense/Aerospace

Choosing GaN

The performance advantages of Gallium Nitride technology make it ideal for applications that can benefit most from higher power density, greater PAE, ruggedness, wideband performance and/or superior ESD resistance—the characteristics that distinguish GaN from other semiconductor technologies. At the same time, various other applications can be well-served by mature, incumbent Gallium Arsenide high-performance processes. As a GaAs and GaN leader, let TriQuint help you choose the right process for your application.

Choosing GaN Q&A

1. My application requires 1W output power in the 3-6GHz range. Is GaN the right choice for me?  GaN was developed for high power amplifiers through 20GHz. For 6V, 9V or 12V applications up to 1.5W output power, the best and most cost effective choice could be one of our 100mm GaAs pHEMT processes.
2. I’m looking for highly linear performance in a wireless base station application. I understand GaN is generally more linear than GaAs. Is that true? Generally speaking, yes.  For example: Comparing 0.25µm GaN with the same FET periphery as 0.25µm pHEMT, the GaN devices will have a higher intercept point than GaAs – However, tell TriQuint about how you define ‘linearity’ for your application. What are the load conditions and what is the quiescent current? We can point you toward the best value process.
3. I’ve got to have better PAE than the 30% we’ve typically achieved with LDMOS RF transistors. I understand GaN PAE is exceptional. What’s the best choice? GaN PAE is better than GaAs when comparing similar devices. PAE can be 50% or more. If your base station or other design could benefit from wideband performance as well as much higher PAE, ask about our PowerBand™ family that delivers 45% to 50% PAE across 2GHz or more bandwidth. GaN-based PowerBand™ devices will be available later in 2009. The more you know about your exact performance requirements the faster we can get you started with the right process.
4. Is TriQuint’s process designed to be competitive with lower-frequency, higher-power GaN? TriQuint seeks to serve the high-power, high-frequency GaN market since the applications that can benefit most from GaN’s inherent performance advantages are typically both high-power and high-frequency. We offer excellent lower-power, lower-frequency alternatives, including the industry’s largest selection of GaAs processes and standard products.

Related Links
Foundry
Foundry Customer Log-in
Defense/Aerospace
Process Comparison