Process

TQPED
0.5µm E/D
pHEMT

TQTRx
0.6µm E/D
MESFET

0.35µm
PWR pHEMT
3MI

0.25µm
XKu-pHEMT
3MI

Wafer Size

150mm

150mm

100mm 

100mm 

Photolithography

Optical

Optical

Optical 

E-Beam 

Technology

E-D pHEMT

E-D MeSFET

D pHEMT 

D pHEMT 

Critical Dimension (um)

0.5

0.6

0.35 

0.25 

Mask layers including substrate vias

13

16

Metals

3-BCB*

3-BCB*

3-AB* 

3-AB* 

MIM C/A (fF/um^2)

0.6

1.2

0.24, 0.30, 1.2 

0.24, 0.30, 1.2  

TFR (ohms/sqr.)

50 or 1000

50

50 

50

Bulk R (ohms/sqr.)

320

700

160 

160 

Transistor type

D

E

D

E

G 

D 

D 

Vp (V) Typical

-0.8

0.35

-0.6

0.15

-2.2 

-1.0 

-1.0 

Idss (mA/mm)

230

0.1

70

400 

300 

300 

Idh/max (mA/mm)

515

300

90

Gm (mS/mm)

365

600

200

225

170

375 

400 

BVGD (V) Typical

19

18

18.5

22

19 

22 

18