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TriQuint is proud to announce the latest additions to our innovative RF portfolio. View our New Products page to discover ways to simplify your RF designs across mobile, network infrastructure and defense applications.
TriQuint's LowDrift™ and NoDrift™ filter technologies dramatically reduce temperature sensitivity for fewer dropped calls and a better user experience.
TriQuint's QUANTUM Tx™ family of highly integrated transmit modules reduce board space and enable a much smaller footprint for 2G / 3G / 4G mobile devices. Find out how these building blocks can make RF design easier and faster for 2G and entry-level 3G devices.
Patented Spatium™ technology from TriQuint delivers a higher standard of efficiency, reliability and frequency range for high-power RF applications including communications, electronic warfare (EW), radar and test and measurement.
TriQuint's innovative TriAccess™ portfolio enables more efficient broadband video, voice and data services. TriQuint amplifiers and filters lower power consumption with improved performance. TriQuint enables all major 75 ohm RF systems in headend, infrastructure, MDU and CPE applications.
Consumers have come to expect Wi-Fi connectivity in their smartphones, tablets and other mobile devices. You'll find TriQuint's TriConnect® Wi-Fi RF modules in many of the world's most sought-after products.
TRITIUM™ is a family of highly integrated modules designed for use in 3G mobile phones, data cards and USB modems. Optimize your 3G CDMA / WCDMA / HSUPA applications and gain maximum design flexibility.
TriQuint's highly integrated TRIUMF™ MMPAs are one more proven way that TriQuint engineers are delivering innovative solutions for the most complex mobile design challenges for cutting-edge smartphones. Let us help you simplify your 2G / 3G / 4G design and enhance system performance while speeding time to market.
March 5, 2013 - TriQuint has been honored at the 2013 CS International conference for its new GaN-on-diamond wafers with advanced thermal management that can enable RF devices up to three times smaller than today's solutions. The DARPA-funded Near Junction Thermal Transport initiative is the third TriQuint GaN program honored in three years by international semiconductor industry leaders. James L. Klein, Vice President and General Manager for Infrastructure and Defense Products, remarked that unlocking the true potential of high-efficiency GaN circuits is being realized through TriQuint achievements. "We are enabling new generations of GaN devices that offer significant RF design and operational benefits for our commercial and defense customers," he said. TriQuint's design-ready GaN solutions are complemented by a full range of post-processing, packaging, test and foundry services. Contact TriQuint for details.