TRIQUINT INTRODUCES INNOVATIVE MANUFACTURING PROCESS
 FOR BUILDING NEXT GENERATION WIRELESS SOLUTIONS

Integration of Two Technologies Enables Single Chip RF Solutions

HILLSBORO, OR (USA) – December 3, 2007 – TriQuint Semiconductor, Inc (Nasdaq: TQNT), the world’s largest GaAs foundry supplier, today introduced TQBiHEMT, its latest foundry process for wireless/RF design engineers. This new manufacturing capability combines two of TriQuint’s previous processes, offering designers one technology to integrate previously incompatible functional blocks onto a single die, reducing part count, saving board space and improving overall system costs.

TQBiHEMT is well suited for highly integrated front end radio modules typically found in wireless applications with high data rates and frequencies. These types of applications require a semiconductor process which allows front end functional blocks to be optimized individually. TQBiHEMT enables the optimal integration of high power amplifiers in HBT on the same die as pHEMT low noise amplifiers and pHEMT switches, while remaining a cost effective design solution.

“GaAs is a key technology for infrastructure markets requiring high frequency and/or high power performance. TriQuint’s TQBiHEMT process represents an evolutionary step-up from earlier BiFET technologies by offering increased functionality,” notes Asif Anwar, Strategy Analytics. “The GaAs industry is dispelling the myth that integration is an advantage offered by silicon processes alone and continues to increase the value-add to customers.”

“The demand for 3G, 4G wireless and other high frequency wireless applications is growing and our customers look to us to help them tap into this burgeoning market,” said Glen Riley, Vice President and General Manager for TriQuint Commercial Foundry. “The introduction of the TQBiHEMT process demonstrates TriQuint’s commitment to our customer success through the delivery of innovative technology at a competitive price point relative to discrete solutions.”

TriQuint uses its high volume InGaP HBT process, TQHBT3 -- designed for high power, high efficiency and linear power amplifiers -- in its own handset products used in the world’s most popular mobile phones. Likewise, TriQuint’s InGaAs E/D pHEMT process, TQPED, is utilized to make high isolation switches and low noise amplifiers for the handset and wireless data markets. The TQBiHEMT process, an innovative combination of these two processes, enables the creation of single chip products, incorporating the best possible power amplifiers and switch low noise amplifier components.

Mike Peters, Director of Marketing for TriQuint’s Commercial Foundry noted, “TQBiHEMT provides wireless communications system designers the circuit component and 3-layer interconnect technology required to optimize performance goals for next generation RFICs. Together with our proven manufacturing capabilities, reputation for quality and reliability and excellent design tools, engineers can be confident the new TQBiHEMT process will help them successfully create highly integrated wireless front ends.”

Process Information
The TQBiHEMT process incorporates three transistor types: A highly reliable InGaP HBT transistor, a depletion mode pHEMT transistor and an enhancement mode pHEMT transistor. These three active device types are complimented by high-Q passive circuit elements: precision thin film, nichrome resistors, high value bulk epi resistors and high value/small area capacitors. Three interconnecting metal layers (2 global, one local) and an optional backside grounding via technology complete the circuit component suite available to designers. The process is fabricated on 150-mm (6-inch) wafers.


Process Summary Specifications

Device samples and designs kits will be available in the first quarter of 2008. For additional information about TQBiHEMT Commercial Foundry Services please contact your TriQuint sales representative or email foundryinfo@tqs.com.

FACTS ABOUT TRIQUINT
Founded in 1985, we “Connect the Digital World to the Global Network”™ by supplying high-performance RF modules, components and foundry services to the world's leading communications companies. Specifically, TriQuint supplies products to four out of the top five cellular handset manufacturers, and is a leading gallium arsenide (GaAs) supplier to major defense and space contractors. TriQuint creates standard and custom products using advanced processes that include gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies to serve diverse markets including wireless handsets, base stations, broadband communications and military. TriQuint is also lead researcher in a 3-year DARPA program to develop advanced gallium nitride (GaN) amplifiers. TriQuint, as named by Strategy Analytics in August 2007, is the number-three worldwide leader in GaAs devices and the world’s largest commercial GaAs foundry. TriQuint has ISO9001 certified manufacturing facilities in Oregon, Texas, and Florida and a production plant in Costa Rica; design centers are located in North America and Germany. Visit TriQuint at www.triquint.com/rf to register for our newsletters.

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