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TriQuint is proud to announce the latest additions to our innovative RF portfolio. View our New Products page to discover ways to simplify your RF designs across mobile, network infrastructure and defense applications.
TriQuint's LowDrift™ and NoDrift™ filter technologies dramatically reduce temperature sensitivity for fewer dropped calls and a better user experience.
TriQuint's QUANTUM Tx™ family of highly integrated transmit modules reduce board space and enable a much smaller footprint for 2G / 3G / 4G mobile devices. Find out how these building blocks can make RF design easier and faster for 2G and entry-level 3G devices.
Patented Spatium™ technology from TriQuint delivers a higher standard of efficiency, reliability and frequency range for high-power RF applications including communications, electronic warfare (EW), radar and test and measurement.
TriQuint's innovative TriAccess™ portfolio enables more efficient broadband video, voice and data services. TriQuint amplifiers and filters lower power consumption with improved performance. TriQuint enables all major 75 ohm RF systems in headend, infrastructure, MDU and CPE applications.
Consumers have come to expect Wi-Fi connectivity in their smartphones, tablets and other mobile devices. You'll find TriQuint's TriConnect® Wi-Fi RF modules in many of the world's most sought-after products.
TRITIUM™ is a family of highly integrated modules designed for use in 3G mobile phones, data cards and USB modems. Optimize your 3G CDMA / WCDMA / HSUPA applications and gain maximum design flexibility.
TriQuint's highly integrated TRIUMF™ MMPAs are one more proven way that TriQuint engineers are delivering innovative solutions for the most complex mobile design challenges for cutting-edge smartphones. Let us help you simplify your 2G / 3G / 4G design and enhance system performance while speeding time to market.
Learn about the basic technologyof gallium nitride (GaN) and itsapplications in RF design.
TriQuint is an innovative leader in gallium nitride (GaN) research, development, foundry services and product solutions. We began exploring gallium nitride's potential in 1999 and released our first GaN on silicon carbide (SiC) foundry process in 2008. TriQuint recently announced record-setting GaN circuit reliability with its TQGaN25 Generation II process that paves the way for more robust performance, lower maintenance and longer operational lifetimes. TriQuint is also accredited by the DoD (DMEA) as a Microelectronics Trusted Source (Category 1A) for its foundry, post-processing, packaging/assembly and test services.
TriQuint's gallium nitride technology offers inherent advantages including greater power densities, ruggedness, wideband performance, power added efficiency (PAE) and ESD resistance. GaN technology is very well suited for a wide range of applications that include communications, network infrastructure, and defense / aerospace such as phased array radar, counter-IED (C-IED), VSAT and similar systems.
TriQuint's gallium nitride R&D expertise and leadership in a wide range of high-power, high-frequency processes led DARPA to choose TriQuint for multiple contracts, most recently for its Near Junction Thermal Transport (NJTT), Microscale Power Conversion (MPC) and 'NEXT' programs. TriQuint also supports the Defense Production Act Title III GaN program for continued manufacturing enhancements. Other advanced TriQuint GaN research and development programs are funded by the Tri-Services laboratories that include U.S. Air Force, Army and Navy divisions. TriQuint researchers are pioneering new ultra-fast, high-power DC-DC switches, integrated high-efficiency amplifiers and complex high dynamic range mixed-signal devices.
Our comprehensive foundry services are complemented by TriQuint's innovative GaN product solutions including full MMIC amplifiers, die-level FETs, switches and wideband transistors from DC-18 GHz. TriQuint also provides state-of-the-art packaging and integrated assembly services for single die and multi-chip modules through our secure, in-house facility.