News & Discoveries
TriQuint GaN Achieves Record Reliability
March 1, 2013
TriQuint gallium nitride (GaN) and gallium arsenide (GaAs) high-performance solutions for wide-ranging applications will take center stage March 4-5 in Frankfurt at the third annual Compound Semiconductor International conference. TriQuint will detail its latest reliability breakthroughs that extend the service lifetimes for GaN-based devices. TriQuint will also spotlight the achievements of its GaN R&D programs that include reducing RF component size even further while managing heat and increasing power density. TriQuint innovation includes design-ready GaN solutions such as FETs, MMICs, packaged transistors and high-power RF switches as well as our renowned foundry services. Contact TriQuint for details.