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TriQuint Announces Four New GaN Product Solutions
June 18, 2012
TriQuint has announced three new GaN MMIC RF power amplifiers and a new high-power GaN RF transistor at IMS MTT-S 2012. The GaN power amplifiers bring greater efficiency, wideband coverage and excellent performance for defense and commercial applications. TGA2572-FL (available now) and TGA2593-GSG & TGA2579-FL (available in August), are all housed in flange mount packages and combine high RF power output and efficiency with excellent thermal management characteristics. The newest GaN packaged transistor, T1G6003028-FS, delivers more than 30W RF output power from DC-6 GHz with drain efficiency of 50% and 11.5dB gain, 3dB higher than its nearest competitor. This transistor can cut the number of driver stages in an amplifier design by 50%. Contact product marketing or TriQuint sales for details.