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TriQuint to Develop New Ultra-Fast GaN Switches
May 1, 2012
TriQuint has won a new gallium nitride (GaN) R&D contract from the Defense Advanced Research Projects Agency (DARPA). TriQuint was selected as Technical Area I prime contractor for the Microscale Power Conversion (MPC) program that is seeking to create ultra-fast / high-power GaN switch modulators for integration with high-efficiency RF amplifiers. TriQuint leads multiple GaN R&D endeavors including DARPA's 'NEXT' program for high-frequency, mixed-signal amplifiers and the Defense Production Act (DPA) Title III manufacturing enhancement program. "The break-through performance demonstrated in 'NEXT' has helped us develop new devices that should open up additional radar and communications applications for us," remarked Defense Products & Foundry Services VP and GM, James L. Klein. Contact product marketing or TriQuint Sales for innovative GaN solutions.