News & Discoveries
New GaN Solution Delivers Power & Efficiency
October 11, 2011
TriQuint's innovative new 18W GaN packaged HEMT RF power transistor, T1G6001528-Q3, delivers high output power and superior efficiency—more than 60% at 6 GHz. It is an excellent choice for defense and commercial wireless communications, avionics, radar, EW jammers, test equipment and any application in which high power, broad frequency coverage and high efficiency are critical. "Nearly every high performance application today requires RF power devices optimized for not just one, but all key parameters," said TriQuint Defense/Aerospace Vice President, James L. Klein. "The T1G6001528-Q3 exemplifies how TriQuint’s GaN technology can meet these challenges without compromises." Contact product marketing for samples; meet TriQuint’s GaN experts at EuMW, 11-13 October, Manchester, UK.